This paper described the nanolithography technique utilizing FePt nanoparticles as etch masks for the fabrication of silicon pattern. The high density and large area arrangement of FePt nanoparticle monolayer on the silicon substrate was prepared by Langmuir-Blodgett (LB) technique. Subsequent patterned silicon pillars were formed by reactive ion etching. The results indicate that the control conditions of reactive ion etching are a promising method for preparing nanodot and nanopillars (< 50 nm) using FePt nanoparticles as etch masks.