| Residential College | false |
| Status | 已發表Published |
| Highly tunable and strongly bound exciton in MoSi2N4 via strain engineering | |
Liang, Dan; Xu, Shi ; Lu, Pengfei ; Cai, Yongqing
| |
| 2022-05 | |
| Source Publication | Physical Review B
 |
| Volume | 105Pages:195302 |
| DOI | 10.1103/PhysRevB.105.195302 |
| Indexed By | SCIE |
| Fulltext Access | |
| Citation statistics | |
| Document Type | Journal article |
| Collection | INSTITUTE OF APPLIED PHYSICS AND MATERIALS ENGINEERING |
| Corresponding Author | Lu, Pengfei; Cai, Yongqing |
| Recommended Citation GB/T 7714 | Liang, Dan,Xu, Shi,Lu, Pengfei,et al. Highly tunable and strongly bound exciton in MoSi2N4 via strain engineering[J]. Physical Review B, 2022, 105, 195302. |
| APA | Liang, Dan., Xu, Shi., Lu, Pengfei., & Cai, Yongqing (2022). Highly tunable and strongly bound exciton in MoSi2N4 via strain engineering. Physical Review B, 105, 195302. |
| MLA | Liang, Dan,et al."Highly tunable and strongly bound exciton in MoSi2N4 via strain engineering".Physical Review B 105(2022):195302. |
| Files in This Item: | There are no files associated with this item. | |||||
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