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Orderly array of in-plane GaAs nanowires on exact (001) silicon for antiphase-domain-free GaAs thin films
Li , Q; Ng, K. W.; Lau, K. M.
2015-05-01
Source PublicationCS MANTECH Conference Digests 2015
AbstractWe report material characterization of antiphasedomain-free GaAs thin films grown out of highly ordered in-plane GaAs nanowires on exact (001) silicon substrates. The evolution of surface morphology from the nanowires to the thin films has been investigated by SEM. Anisotropic defect distribution and the impact of the initial nanowire quality on the resultant coalesced layers have been analyzed by TEM, XRD and AFM. The growth scheme in this work opens up a promising path to integrate GaAs based devices on the CMOS-compatible Si platform.
KeywordIII-V on silicon aspect ratio trapping planar nanowires thin films
URLView the original
Language英語English
The Source to ArticlePB_Publication
PUB ID22596
Document TypeConference paper
CollectionINSTITUTE OF APPLIED PHYSICS AND MATERIALS ENGINEERING
Corresponding AuthorLau, K. M.
Recommended Citation
GB/T 7714
Li , Q,Ng, K. W.,Lau, K. M.. Orderly array of in-plane GaAs nanowires on exact (001) silicon for antiphase-domain-free GaAs thin films[C], 2015.
APA Li , Q., Ng, K. W.., & Lau, K. M. (2015). Orderly array of in-plane GaAs nanowires on exact (001) silicon for antiphase-domain-free GaAs thin films. CS MANTECH Conference Digests 2015.
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