Residential Collegefalse
Status已發表Published
A 0.18-V 382-μ W Bluetooth Low-Energy Receiver Front-End with 1.33-nW Sleep Power for Energy-Harvesting Applications in 28-nm CMOS
Haidong Yi2; Wei-Han Yu2; Pui-In Mak2; Jun Yin2; Rui P. Martins1
2018-06-01
Source PublicationIEEE Journal of Solid-State Circuits
ISSN00189200
Volume53Issue:6Pages:1618-1627
Abstract

This paper describes an ultra-low-voltage Bluetooth low-energy (BLE) receiver (RX) front end with an on-chip micropower manager (μPM) to customize the internal voltage domains. It aims at direct powering by the sub-0.5-V energy-harvesting sources like the on-body thermoelectric, eliminating the loss and cost of the interim dc-dc converters. Specifically, the RX incorporates: 1) a two-stage power-gating low-noise amplifier with fully on-chip input-impedance matching and passive gain boosting reducing both the active and sleep power; 2) a class-D voltage-controlled oscillator (VCO) in parallel with a class-C starter to secure a fast startup; and 3) a μ PM using ring-VCO-locked charge pumps and bandgap references to withstand the supply-voltage variation (0.18-0.3 V). Fabricated in 28-nm CMOS, the RX operates down to a 0.18-V supply, while exhibiting 11.3-dB NF and -12.5-dBm out-of-band IIP3. The VCO shows < -113 dBc/Hz phase noise at 2.5-MHz offset. The active and sleep power are 382 μW and 1.33 nW, respectively.

KeywordBandgap Reference (Bgr) Bluetooth Low Energy (Ble) Charge Pump (Cp) Class-d Voltage-controlled Oscillator (Vco) Cmos Energy Harvesting Low-noise Amplifier (Lna) Micropower Manager (Μpm) Power-gating Receiver (Rx) Ultra-low Power (Ulp) Ultra-low Voltage (Ulv)
DOI10.1109/JSSC.2018.2815987
URLView the original
Indexed BySCIE
Language英語English
WOS Research AreaEngineering
WOS SubjectEngineering, Electrical & Electronic
WOS IDWOS:000433336200005
Scopus ID2-s2.0-85045199738
Fulltext Access
Citation statistics
Document TypeJournal article
CollectionDEPARTMENT OF ELECTRICAL AND COMPUTER ENGINEERING
Faculty of Science and Technology
THE STATE KEY LABORATORY OF ANALOG AND MIXED-SIGNAL VLSI (UNIVERSITY OF MACAU)
INSTITUTE OF MICROELECTRONICS
Corresponding AuthorPui-In Mak
Affiliation1.Universidade de Lisboa
2.Universidade de Macau
First Author AffilicationUniversity of Macau
Corresponding Author AffilicationUniversity of Macau
Recommended Citation
GB/T 7714
Haidong Yi,Wei-Han Yu,Pui-In Mak,et al. A 0.18-V 382-μ W Bluetooth Low-Energy Receiver Front-End with 1.33-nW Sleep Power for Energy-Harvesting Applications in 28-nm CMOS[J]. IEEE Journal of Solid-State Circuits, 2018, 53(6), 1618-1627.
APA Haidong Yi., Wei-Han Yu., Pui-In Mak., Jun Yin., & Rui P. Martins (2018). A 0.18-V 382-μ W Bluetooth Low-Energy Receiver Front-End with 1.33-nW Sleep Power for Energy-Harvesting Applications in 28-nm CMOS. IEEE Journal of Solid-State Circuits, 53(6), 1618-1627.
MLA Haidong Yi,et al."A 0.18-V 382-μ W Bluetooth Low-Energy Receiver Front-End with 1.33-nW Sleep Power for Energy-Harvesting Applications in 28-nm CMOS".IEEE Journal of Solid-State Circuits 53.6(2018):1618-1627.
Files in This Item:
There are no files associated with this item.
Related Services
Recommend this item
Bookmark
Usage statistics
Export to Endnote
Google Scholar
Similar articles in Google Scholar
[Haidong Yi]'s Articles
[Wei-Han Yu]'s Articles
[Pui-In Mak]'s Articles
Baidu academic
Similar articles in Baidu academic
[Haidong Yi]'s Articles
[Wei-Han Yu]'s Articles
[Pui-In Mak]'s Articles
Bing Scholar
Similar articles in Bing Scholar
[Haidong Yi]'s Articles
[Wei-Han Yu]'s Articles
[Pui-In Mak]'s Articles
Terms of Use
No data!
Social Bookmark/Share
All comments (0)
No comment.
 

Items in the repository are protected by copyright, with all rights reserved, unless otherwise indicated.