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A 1.1 μW CMOS smart temperature sensor with an inaccuracy of ±0.2 °C (3σ) for clinical temperature monitoring
Man-Kay Law1; Sanfeng Lu2; Tao Wu3; Amine Bermak4; Pui-In Mak2; Rui P. Martins5
2016-04-15
Source PublicationIEEE Sensors Journal
ISSN1530437X
Volume16Issue:8Pages:2272-2281
Abstract

In this paper, an ultra-low power, high accuracy CMOS smart temperature sensor customized for clinical temperature monitoring based on substrate p-n-p bipolar junction transistors (BJTs) is presented. A power efficient analog front end with a sensing-range customized multi-ratio pregain stage is proposed to effectively utilize the input range of the incremental analog-to-digital converter to relax the conversion speed and resolution requirement. A block-based data weighted averaging technique is also proposed to achieve highly accurate pre-gain ratios while significantly reducing the implementation complexity. The complete temperature sensor is implemented in a standard 0.18 μm CMOS process occupying an active area of 0.198 mm. Measurement results from 20 test chips show that an inaccuracy of ±0.2 °C (3σ) is achieved from 25 °C to 45 °C after one-point calibration. The average power consumption is 1.1 μW at a conversion speed of 2 Sa/s.

KeywordSmart Temperature Sensor Ultra-low Power High Accuracy Incremental Analog-to-digital Converter (I-adc), Multi-ratio Pre-gain Block-based Data Weighted Averaging (Bdwa)
DOI10.1109/JSEN.2016.2518706
URLView the original
Indexed BySCIE
Language英語English
WOS Research AreaEngineering ; Instruments & Instrumentation ; Physics
WOS SubjectEngineering, Electrical & Electronic ; Instruments & Instrumentation ; Physics, Applied
WOS IDWOS:000372419100010
Scopus ID2-s2.0-84962090168
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Citation statistics
Document TypeJournal article
CollectionTHE STATE KEY LABORATORY OF ANALOG AND MIXED-SIGNAL VLSI (UNIVERSITY OF MACAU)
Faculty of Science and Technology
INSTITUTE OF MICROELECTRONICS
DEPARTMENT OF ELECTRICAL AND COMPUTER ENGINEERING
Corresponding AuthorMan-Kay Law; Sanfeng Lu; Tao Wu; Amine Bermak; Pui-In Mak; Rui P. Martins
Affiliation1.State Key Laboratory of Analog and Mixed-Signal VLSI, University of Macau, Macao, China
2.State Key Laboratory of Analog and Mixed-Signal VLSI and FST-ECE, University of Macau, Macao, China
3.State Key Laboratory of Analog and Mixed-Signal VLSI and FST-ECE, University of Macau, Macao, China
4.College of Science and Engineering, Hamad Bin Khalifa University, Doha, Qatar, and also with the Department of Electronics and Computer Engineering, Hong Kong University of Science and Technology, Hong Kong
5.State Key Laboratory of Analog and MixedSignal VLSI and FST-ECE, University of Macau, Macao, China, on leave from Instituto Superior Técnico, Universidade de Lisboa, Lisbon, Portugal
First Author AffilicationUniversity of Macau
Corresponding Author AffilicationUniversity of Macau;  Faculty of Science and Technology
Recommended Citation
GB/T 7714
Man-Kay Law,Sanfeng Lu,Tao Wu,et al. A 1.1 μW CMOS smart temperature sensor with an inaccuracy of ±0.2 °C (3σ) for clinical temperature monitoring[J]. IEEE Sensors Journal, 2016, 16(8), 2272-2281.
APA Man-Kay Law., Sanfeng Lu., Tao Wu., Amine Bermak., Pui-In Mak., & Rui P. Martins (2016). A 1.1 μW CMOS smart temperature sensor with an inaccuracy of ±0.2 °C (3σ) for clinical temperature monitoring. IEEE Sensors Journal, 16(8), 2272-2281.
MLA Man-Kay Law,et al."A 1.1 μW CMOS smart temperature sensor with an inaccuracy of ±0.2 °C (3σ) for clinical temperature monitoring".IEEE Sensors Journal 16.8(2016):2272-2281.
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