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Enhanced RFICs in nanoscale CMOS
Pui-In Mak1; Rui P. Martins1,2
2012-10-01
Source PublicationIEEE Microwave Magazine
ISSN1527-3342
Volume13Issue:6Pages:80-89
Abstract

Wireless and semiconductor industries have recently discussed their vision of fully autonomous and seamless wireless connectivity by combining advanced nanoscale CMOS technologies with innovative hybrid-domain circuits and systems solutions [1]. One goal inside this broad vision is to develop a smart mobile companion device with high performance, adaptive connectivity, and high power efficiency. High performance is the essential ingredient to coping with the ever-increasing add-on functionalities in small handheld devices, integrating cellular, WiFi, Bluetooth, Global Positioning System and mobile TV. All of these generate many opportunities for furthering the horizons of radio frequency integrated circuits (RFICs) [2] in the years to come. © 2000-2012 IEEE.

DOI10.1109/MMM.2012.2205831
URLView the original
Indexed BySCIE
Language英語English
WOS Research AreaEngineering ; Telecommunications
WOS SubjectEngineering, Electrical & Electronic ; Telecommunications
WOS IDWOS:000309190000009
Scopus ID2-s2.0-84866647758
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Citation statistics
Document TypeJournal article
CollectionINSTITUTE OF MICROELECTRONICS
Faculty of Science and Technology
THE STATE KEY LABORATORY OF ANALOG AND MIXED-SIGNAL VLSI (UNIVERSITY OF MACAU)
DEPARTMENT OF ELECTRICAL AND COMPUTER ENGINEERING
Corresponding AuthorPui-In Mak; Rui P. Martins
Affiliation1.State Key Laboratory of Analog and Mixed-Signal VLSI, University of Macau, China
2.Instituto Superior Técnico (IST)/TU of Lisbon, Portugal
First Author AffilicationUniversity of Macau
Corresponding Author AffilicationUniversity of Macau
Recommended Citation
GB/T 7714
Pui-In Mak,Rui P. Martins. Enhanced RFICs in nanoscale CMOS[J]. IEEE Microwave Magazine, 2012, 13(6), 80-89.
APA Pui-In Mak., & Rui P. Martins (2012). Enhanced RFICs in nanoscale CMOS. IEEE Microwave Magazine, 13(6), 80-89.
MLA Pui-In Mak,et al."Enhanced RFICs in nanoscale CMOS".IEEE Microwave Magazine 13.6(2012):80-89.
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