A 27-dBm, 0.92-GHz CMOS Power Amplifier with Mode Switching and a High-Q Compact Inductor (HQCI) Achieving a 30% Back-Off PAE

doi:10.1109/TCSII.2022.3201670

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	A 27-dBm, 0.92-GHz CMOS Power Amplifier with Mode Switching and a High-Q Compact Inductor (HQCI) Achieving a 30% Back-Off PAE
	Rawat, Arvind Singh 1; Rajendran, Jagadheswaran 1; Mariappan, Selvakumar 1; Kumar, Narendra 2; Mak, Pui In3 ; Martins, Rui P.3
	2022-08-25
Source Publication	IEEE TRANSACTIONS ON CIRCUITS AND SYSTEMS—II: EXPRESS BRIEFS
ISSN	1549-7747
Volume	70 Issue:1 Pages:121-125
Abstract	This brief reports a 0.92-GHz two-stage power amplifier (PA) in 130-nm CMOS process with improved back-off power efficiency and linearity. The two key techniques are: a switching mechanismfor adaptive device sizing of the power stage, and a high-Q compact inductor (HQCI). The PA is designed to operate in low power (LP) mode and high power (HP) mode by using an NMOS pass transistor as a switch. The PA measures a peak output power (Pout) of 27 dBm with a peak power added efficiency (PAE) of 44%. The maximum linear output power reaches 21.5 dBm thanks to our unique HQCI-based outputmatching network. At the back-off output power, a 10% increment in PAE is achieved by switching the size of the power stage with the MOS switch. Maximum Pout of 21.5 dBm is measured below -30 dBc ACLR and 4%EVM for the 16-QAM/20 -MHz input modulated signal. The PA has an overall chip size of 1.382 × 1.425 mm2.
Keyword	Adaptive Size Back-off Efficiency Cmos Intermodulation Linearity Matching Networks Power Amplifier (Pa) Q-factor Switching Spiral Inductor Sub-ghz
DOI	10.1109/TCSII.2022.3201670
URL	View the original
Indexed By	SCIE
Language	英語English
WOS Research Area	Engineering
WOS Subject	Engineering, Electrical & Electronic
WOS ID	WOS:000908711600025
Scopus ID	2-s2.0-85137590202
Fulltext Access	View Full-Text via DOI View Full-Text via Web of Science View Full-Text via Scopus
Citation statistics
Document Type	Journal article
Collection	INSTITUTE OF MICROELECTRONICS Faculty of Science and Technology THE STATE KEY LABORATORY OF ANALOG AND MIXED-SIGNAL VLSI (UNIVERSITY OF MACAU) DEPARTMENT OF ELECTRICAL AND COMPUTER ENGINEERING
Corresponding Author	Rajendran, Jagadheswaran
Affiliation	1.Collaborative Microelectronic Design Excellence Centre (CEDEC), Universiti Sains Malaysia, Georgetown, Penang, Malaysia 2.Department of Electrical Engineering, Faculty of Engineering, University of Malaya, Kuala Lumpur, Malaysia 3.Department of ECE, Faculty of Science and Technology, State Key Laboratory of Analog and Mixed-Signal VLSI, Institute of Microelectronics, University of Macau, Macau, China
Recommended Citation GB/T 7714	Rawat, Arvind Singh,Rajendran, Jagadheswaran,Mariappan, Selvakumar,et al. A 27-dBm, 0.92-GHz CMOS Power Amplifier with Mode Switching and a High-Q Compact Inductor (HQCI) Achieving a 30% Back-Off PAE[J]. IEEE TRANSACTIONS ON CIRCUITS AND SYSTEMS—II: EXPRESS BRIEFS, 2022, 70(1), 121-125.
APA	Rawat, Arvind Singh., Rajendran, Jagadheswaran., Mariappan, Selvakumar., Kumar, Narendra., Mak, Pui In., & Martins, Rui P. (2022). A 27-dBm, 0.92-GHz CMOS Power Amplifier with Mode Switching and a High-Q Compact Inductor (HQCI) Achieving a 30% Back-Off PAE. IEEE TRANSACTIONS ON CIRCUITS AND SYSTEMS—II: EXPRESS BRIEFS, 70(1), 121-125.
MLA	Rawat, Arvind Singh,et al."A 27-dBm, 0.92-GHz CMOS Power Amplifier with Mode Switching and a High-Q Compact Inductor (HQCI) Achieving a 30% Back-Off PAE".IEEE TRANSACTIONS ON CIRCUITS AND SYSTEMS—II: EXPRESS BRIEFS 70.1(2022):121-125.

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