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Passivating Defects at the Bottom Interface of Perovskite by Ethylammonium to Improve the Performance of Perovskite Solar Cells
Ren, Jiahao1,2; Liu, Tanghao2,3; He, Bingchen2; Wu, Guangbao2; Gu, Hao2; Wang, Bingzhe2; Li, Jielei2; Mao, Yulin2; Chen, Shi1,2; Xing, Guichuan1,2
2022-10-13
Source PublicationSmall
ISSN1613-6810
Volume18Issue:47Pages:2203536
Abstract

The interface of perovskite solar cells (PSCs) plays a significant role in influencing their performance, yet there is still scarce research focusing on their difficult-to-expose bottom interfaces. Herein, ethylammonium bromide (EABr) is introduced into the bottom interface and its passivation effects are studied directly. First, EABr can improve substrate wettability, which is beneficial for the perovskite-film deposition. By lifting off the perovskite film spontaneously from the substrate, it is found that EABr can significantly reduce the amount of unreacted PbI at the bottom interface. These PbI crystals have been recently identified as a major defect source and degradation site for perovskite film. Meanwhile, EABr also lifts the valence band maximum at the bottom side of perovskite from -5.38 to -5.09 eV, facilitating better hole transfer. Such a improvement is also verified by the study of charge carrier dynamics. Through introducing EABr, all photovoltaic parameters of the inverted PSCs are improved, and their power conversion efficiency (PCE) increases from 20.41% to 21.06%. The study highlights the importance of direct characterization of the bottom interface for a better passivation effect.

KeywordAmmonium Group Bottom Interface Defect Passivation Energy-level Alignment Lead Iodide Residual
DOI10.1002/smll.202203536
URLView the original
Indexed BySCIE
Language英語English
WOS Research AreaChemistry ; Science & Technology - Other Topics ; Materials Science ; Physics
WOS SubjectChemistry, Multidisciplinary ; Chemistry, Physical ; Nanoscience & Nanotechnology ; Materials Science, Multidisciplinary ; Physics, Applied ; Physics, Condensed Matter
WOS IDWOS:000867353900001
PublisherJohn Wiley and Sons Inc
Scopus ID2-s2.0-85139606884
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Citation statistics
Document TypeJournal article
CollectionFaculty of Science and Technology
INSTITUTE OF APPLIED PHYSICS AND MATERIALS ENGINEERING
DEPARTMENT OF PHYSICS AND CHEMISTRY
Corresponding AuthorChen, Shi; Xing, Guichuan
Affiliation1.Department of Physics and Chemistry, Faculty of Science and Technology, University of Macau, Avenida da Universidade, Taipa, 999078, Macao
2.Joint Key Laboratory of the Ministry of Education, Institute of Applied Physics and Materials Engineering, University of Macau, Avenida da Universidade, Taipa, 999078, Macao
3.Department of Physics, Hong Kong Baptist University, Kowloon, 999077, Hong Kong
First Author AffilicationFaculty of Science and Technology;  INSTITUTE OF APPLIED PHYSICS AND MATERIALS ENGINEERING
Corresponding Author AffilicationFaculty of Science and Technology;  INSTITUTE OF APPLIED PHYSICS AND MATERIALS ENGINEERING
Recommended Citation
GB/T 7714
Ren, Jiahao,Liu, Tanghao,He, Bingchen,et al. Passivating Defects at the Bottom Interface of Perovskite by Ethylammonium to Improve the Performance of Perovskite Solar Cells[J]. Small, 2022, 18(47), 2203536.
APA Ren, Jiahao., Liu, Tanghao., He, Bingchen., Wu, Guangbao., Gu, Hao., Wang, Bingzhe., Li, Jielei., Mao, Yulin., Chen, Shi., & Xing, Guichuan (2022). Passivating Defects at the Bottom Interface of Perovskite by Ethylammonium to Improve the Performance of Perovskite Solar Cells. Small, 18(47), 2203536.
MLA Ren, Jiahao,et al."Passivating Defects at the Bottom Interface of Perovskite by Ethylammonium to Improve the Performance of Perovskite Solar Cells".Small 18.47(2022):2203536.
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