This work reports the structural and low-temperature electrical transport properties of Mo doped V2O3 single -layer thin films (i.e., with compositions between Mo and V2O3 [V2_xMoxO3_delta (x = 0, 0.05-0.1)]) deposited on alumina (Al2O3) substrates by sol-gel dip-coating technique. The crystallinity of the V2O3 films is modified with the high concentration of Mo doping and exhibits a relatively defective structure compared to that of pure V2O3 films. The low temperature (i.e., over a temperature range of 253.15 to 273.15 K) electrical hysteresis curves reveal that the triggering of metal-insulator transition at low temperatures. The metal-insulator transition (MIT) temperature (Tc) values are found to be 258.49 and 261.11 K for 8 and 10 mol% Mo doped V2O3 films, respectively, which are higher than that of undoped V2O3 (Tc = 253.09 K). The experimental results contribute a promising method to develop a novel material for high-performance low-temperature engineering applications.