Residential College | false |
Status | 已發表Published |
Controlling sulfurization of 2D Mo2C crystal for Mo2C/MoS2-based memristor and artificial synapse | |
Tang, Xin1; Yang, Leilei1,2; Huang, Junhua1; Chen, Wenjun3; Li, Baohua1; Yang, Shaodian1; Yang, Rongliang1; Zeng, Zhiping4; Tang, Zikang5; Gui, Xuchun1 | |
2022-11-29 | |
Source Publication | npj Flexible Electronics |
ISSN | 2397-4621 |
Volume | 6Issue:1Pages:93 |
Abstract | Owing to the conductance-adjustable performance, the emerging two-terminal memristors are promising candidates for artificial synapses and brain-spired neuromorphic computing. Although memristors based on molybdenum disulfide (MoS) have displayed outstanding performance, such as thermal stability and high energy efficiency, reports on memristors based on MoS as the functional layer to simulate synaptic behavior are limited. Herein, a homologous MoC/MoS-based memristor is prepared by partially sulfuring two-dimensional MoC crystal. The memristor shows good stability, excellent retention (~10 s) and endurance (>100 cycles), and a high ON/OFF ratio (>10). Moreover, for comprehensively mimicking biological synapses, the essential synaptic functions of the device are systematically analyzed, including paired-pulse facilitation (PPF), short-term plasticity (STP), long-term plasticity (LTP), long-term depression (LTD), and the transitions from STP to LTP. Notably, this artificial synapse could keep a high-level stable memory for a long time (60 s) after repeated stimulation. These results prove that our device is highly desirable for biological synapses, which show great potential for application in future high-density storage and neuromorphic computing systems. |
DOI | 10.1038/s41528-022-00227-y |
URL | View the original |
Indexed By | SCIE |
Language | 英語English |
WOS Research Area | Engineering ; Materials Science |
WOS Subject | Engineering, Electrical & Electronic ; Materials Science, Multidisciplinary |
WOS ID | WOS:000884285200001 |
Publisher | NATURE PORTFOLIO |
Scopus ID | 2-s2.0-85142186514 |
Fulltext Access | |
Citation statistics | |
Document Type | Journal article |
Collection | INSTITUTE OF APPLIED PHYSICS AND MATERIALS ENGINEERING |
Corresponding Author | Gui, Xuchun |
Affiliation | 1.State Key Laboratory of Optoelectronic Materials and Technologies, School of Electronics and Information Technology, Sun Yat-sen University, Guangzhou, 510275, China 2.Department of physics, Guangxi Minzu University, Nanning, 530006, China 3.School of Electronic Information Engineering, Foshan University, Foshan, 528000, China 4.School of Materials Science and Engineering, Sun Yat-sen University, Guangzhou, 510275, China 5.Institute of Applied Physics and Materials Engineering, University of Macau, Avenida da Universidade, Taipa, 999078, Macao |
Recommended Citation GB/T 7714 | Tang, Xin,Yang, Leilei,Huang, Junhua,et al. Controlling sulfurization of 2D Mo2C crystal for Mo2C/MoS2-based memristor and artificial synapse[J]. npj Flexible Electronics, 2022, 6(1), 93. |
APA | Tang, Xin., Yang, Leilei., Huang, Junhua., Chen, Wenjun., Li, Baohua., Yang, Shaodian., Yang, Rongliang., Zeng, Zhiping., Tang, Zikang., & Gui, Xuchun (2022). Controlling sulfurization of 2D Mo2C crystal for Mo2C/MoS2-based memristor and artificial synapse. npj Flexible Electronics, 6(1), 93. |
MLA | Tang, Xin,et al."Controlling sulfurization of 2D Mo2C crystal for Mo2C/MoS2-based memristor and artificial synapse".npj Flexible Electronics 6.1(2022):93. |
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