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Controlling sulfurization of 2D Mo2C crystal for Mo2C/MoS2-based memristor and artificial synapse
Tang, Xin1; Yang, Leilei1,2; Huang, Junhua1; Chen, Wenjun3; Li, Baohua1; Yang, Shaodian1; Yang, Rongliang1; Zeng, Zhiping4; Tang, Zikang5; Gui, Xuchun1
2022-11-29
Source Publicationnpj Flexible Electronics
ISSN2397-4621
Volume6Issue:1Pages:93
Abstract

Owing to the conductance-adjustable performance, the emerging two-terminal memristors are promising candidates for artificial synapses and brain-spired neuromorphic computing. Although memristors based on molybdenum disulfide (MoS) have displayed outstanding performance, such as thermal stability and high energy efficiency, reports on memristors based on MoS as the functional layer to simulate synaptic behavior are limited. Herein, a homologous MoC/MoS-based memristor is prepared by partially sulfuring two-dimensional MoC crystal. The memristor shows good stability, excellent retention (~10 s) and endurance (>100 cycles), and a high ON/OFF ratio (>10). Moreover, for comprehensively mimicking biological synapses, the essential synaptic functions of the device are systematically analyzed, including paired-pulse facilitation (PPF), short-term plasticity (STP), long-term plasticity (LTP), long-term depression (LTD), and the transitions from STP to LTP. Notably, this artificial synapse could keep a high-level stable memory for a long time (60 s) after repeated stimulation. These results prove that our device is highly desirable for biological synapses, which show great potential for application in future high-density storage and neuromorphic computing systems.

DOI10.1038/s41528-022-00227-y
URLView the original
Indexed BySCIE
Language英語English
WOS Research AreaEngineering ; Materials Science
WOS SubjectEngineering, Electrical & Electronic ; Materials Science, Multidisciplinary
WOS IDWOS:000884285200001
PublisherNATURE PORTFOLIO
Scopus ID2-s2.0-85142186514
Fulltext Access
Citation statistics
Document TypeJournal article
CollectionINSTITUTE OF APPLIED PHYSICS AND MATERIALS ENGINEERING
Corresponding AuthorGui, Xuchun
Affiliation1.State Key Laboratory of Optoelectronic Materials and Technologies, School of Electronics and Information Technology, Sun Yat-sen University, Guangzhou, 510275, China
2.Department of physics, Guangxi Minzu University, Nanning, 530006, China
3.School of Electronic Information Engineering, Foshan University, Foshan, 528000, China
4.School of Materials Science and Engineering, Sun Yat-sen University, Guangzhou, 510275, China
5.Institute of Applied Physics and Materials Engineering, University of Macau, Avenida da Universidade, Taipa, 999078, Macao
Recommended Citation
GB/T 7714
Tang, Xin,Yang, Leilei,Huang, Junhua,et al. Controlling sulfurization of 2D Mo2C crystal for Mo2C/MoS2-based memristor and artificial synapse[J]. npj Flexible Electronics, 2022, 6(1), 93.
APA Tang, Xin., Yang, Leilei., Huang, Junhua., Chen, Wenjun., Li, Baohua., Yang, Shaodian., Yang, Rongliang., Zeng, Zhiping., Tang, Zikang., & Gui, Xuchun (2022). Controlling sulfurization of 2D Mo2C crystal for Mo2C/MoS2-based memristor and artificial synapse. npj Flexible Electronics, 6(1), 93.
MLA Tang, Xin,et al."Controlling sulfurization of 2D Mo2C crystal for Mo2C/MoS2-based memristor and artificial synapse".npj Flexible Electronics 6.1(2022):93.
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