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Advances in oxide semiconductors for surface enhanced Raman scattering
Du, Xuejian1,2; Liu, Di2; An, Keyu2; Jiang, Shouzhen1; Wei, Zhixian4; Wang, Shuangpeng2,3; Ip, Weng Fai3; Pan, Hui2,3
2022-12-01
Source PublicationApplied Materials Today
ISSN2352-9407
Volume29Pages:101563
Abstract

Surface enhanced Raman scattering (SERS) has been recognized as a powerful and useful spectroscopic technology with the capability of ultra-high sensitivity for single-molecule detection. Noble metals, such as Au, have been considered as the best substrates for SERS because of their high detection limit. However, their practical application is hindered by high cost, long-term instability, inferior reproducibility, poor biocompatibility and difficult integration with modern electronic devices. Recently, oxide semiconductors have attracted tremendous attention for their applications into SERS as they can perfectly solve the pre-mentioned challenging issues. Furthermore, the oxide semiconductor SERS substrates can realize selective detection and recyclable usage, leading to their powerful integration with the electronic devices. In the review, we shall summarize the recent advances of oxide semiconductor-based SERS substrates, and highlight the effective strategies, including defect engineering, hybridization, structure manipulation, and configuration design, to boost their SERS performance for commercial applications. At the end, current challenges and future perspectives are concisely discussed, aiming at elevating the SERS activity and broadening their practical applications.

KeywordOxide Semiconductors Sers Enhancement Mechanism Charge Transfer Improvement Strategies
DOI10.1016/j.apmt.2022.101563
URLView the original
Indexed BySCIE
Language英語English
WOS Research AreaMaterials Science
WOS SubjectMaterials Science, Multidisciplinary
WOS IDWOS:000893258100001
PublisherELSEVIER, RADARWEG 29, 1043 NX AMSTERDAM, NETHERLANDS
Scopus ID2-s2.0-85136253867
Fulltext Access
Citation statistics
Document TypeJournal article
CollectionDEPARTMENT OF PHYSICS AND CHEMISTRY
Faculty of Science and Technology
INSTITUTE OF APPLIED PHYSICS AND MATERIALS ENGINEERING
Corresponding AuthorPan, Hui
Affiliation1.School of Physics and Electronics, Shandong Normal University, Jinan, 250358, China
2.Institute of Applied Physics and Materials Engineering, University of Macau, 999078, Macao SAR 999078, China
3.Department of Physics and Chemistry, Faculty of Science and Technology, University of Macau, 999078, Macao SAR 999078, China
4.Institute of Frontier and Interdisciplinary Science and Key Laboratory of Particle Physics and Particle Irradiation (MOE), Shandong University, Qingdao, 266237, China
First Author AffilicationINSTITUTE OF APPLIED PHYSICS AND MATERIALS ENGINEERING
Corresponding Author AffilicationINSTITUTE OF APPLIED PHYSICS AND MATERIALS ENGINEERING;  Faculty of Science and Technology
Recommended Citation
GB/T 7714
Du, Xuejian,Liu, Di,An, Keyu,et al. Advances in oxide semiconductors for surface enhanced Raman scattering[J]. Applied Materials Today, 2022, 29, 101563.
APA Du, Xuejian., Liu, Di., An, Keyu., Jiang, Shouzhen., Wei, Zhixian., Wang, Shuangpeng., Ip, Weng Fai., & Pan, Hui (2022). Advances in oxide semiconductors for surface enhanced Raman scattering. Applied Materials Today, 29, 101563.
MLA Du, Xuejian,et al."Advances in oxide semiconductors for surface enhanced Raman scattering".Applied Materials Today 29(2022):101563.
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