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Subranging BJT-Based CMOS Temperature Sensor With a ±0.45 °C Inaccuracy (3σ) From −50 °C to 180 °C and a Resolution-FoM of 7.2 pJ·K² at 150 °C
Bo Wang1; Man-Kay Law2
2022-10-10
Source PublicationIEEE JOURNAL OF SOLID-STATE CIRCUITS
ISSN0018-9200
Volume57Issue:12Pages:3693-3703
Abstract

This article presents a BJT-based CMOS temperature sensor with a wide sensing range from −50 °C to 180 °C. To effectively relax the sensor resolution requirement and conversion time over the entire temperature range to improve energy efficiency, we introduce a nonlinear subranging readout scheme together with double sampling to achieve dynamic reconfiguration of the sensor readout according to the ambient temperature. We further reduce the sensor power at high temperature by devoting the β -cancellation circuit only for BJT biasing while applying a temperature-independent bias current for the other sensor building blocks. Implemented in 0.18- μm CMOS with four-wire connections and switch-leakage compensation based on small BJTs, the proposed sensor chip prototype achieves a high resolution-FoM of 7.2 pJ ⋅K2 at 150 °C, while featuring a small sensing error of ±0.45 °C under a 1.5-V supply.

KeywordBjt Calibration Double-sampling Adc Lowleakage Switch Subranging Readout Temperature Sensor
DOI10.1109/JSSC.2022.3208770
Indexed BySCIE
WOS Research AreaEngineering
WOS SubjectEngineering, Electrical & Electronic
WOS IDWOS:000869385500001
PublisherIEEE-INST ELECTRICAL ELECTRONICS ENGINEERS INC, 445 HOES LANE, PISCATAWAY, NJ 08855-4141
Scopus ID2-s2.0-85139835524
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Document TypeJournal article
CollectionTHE STATE KEY LABORATORY OF ANALOG AND MIXED-SIGNAL VLSI (UNIVERSITY OF MACAU)
INSTITUTE OF MICROELECTRONICS
Corresponding AuthorBo Wang
Affiliation1.Division of Information and Computing Technology, College of Science and Engineering, Hamad Bin Khalifa University, Doha, Qatar
2.State Key Laboratory of Analog and Mixed-Signal VLSI, Institute of Microelectronics and FST-ECE, University of Macau, Macau, China
Recommended Citation
GB/T 7714
Bo Wang,Man-Kay Law. Subranging BJT-Based CMOS Temperature Sensor With a ±0.45 °C Inaccuracy (3σ) From −50 °C to 180 °C and a Resolution-FoM of 7.2 pJ·K² at 150 °C[J]. IEEE JOURNAL OF SOLID-STATE CIRCUITS, 2022, 57(12), 3693-3703.
APA Bo Wang., & Man-Kay Law (2022). Subranging BJT-Based CMOS Temperature Sensor With a ±0.45 °C Inaccuracy (3σ) From −50 °C to 180 °C and a Resolution-FoM of 7.2 pJ·K² at 150 °C. IEEE JOURNAL OF SOLID-STATE CIRCUITS, 57(12), 3693-3703.
MLA Bo Wang,et al."Subranging BJT-Based CMOS Temperature Sensor With a ±0.45 °C Inaccuracy (3σ) From −50 °C to 180 °C and a Resolution-FoM of 7.2 pJ·K² at 150 °C".IEEE JOURNAL OF SOLID-STATE CIRCUITS 57.12(2022):3693-3703.
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