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Defect engineering of metal halide perovskite optoelectronic devices
Zhang, Xuanyu1; Wang, Xiongbin1,2; Liu, Huan1; Chen, Rui1
Source PublicationProgress in Quantum Electronics
ISSN0079-6727
2022-09-01
Abstract

Recently, thanks to their unique and attractive properties, such as tunable bandgap, high absorption coefficient, and long charge carrier diffusion length, metal halide perovskites have been recognized as one of the emerging candidates for next-generation optoelectronic devices. Optoelectronic devices based on perovskites have achieved significant breakthroughs in a relatively short period of time. However, their commercialization still faces various challenges, including stability, scalability, and reproducibility. Defects are often the culprits behind these problems, either inside the perovskites or at the device interfaces. Therefore, rational utilization of defect engineering to minimize the effect of defects on device performance and control of carrier behavior is the key to achieve efficient and stable perovskite-based optoelectronic devices (PODs). Given the important contribution to the rapid development of PODs, there is an urgent need to systematically investigate and summarize recent research advances in defect engineering. Therefore, in this review, defect physics in PODs are described in detail, the role and importance of defects in various PODs are highlighted, and various strategies for optimizing PODs are reviewed. Finally, based on the latest progresses and breakthroughs, the challenges facing in the future development of metal halide perovskites and their potential significance in the field of the optoelectronic are prospected.

KeywordDefects Engineering Metal Halide Perovskite Solar Cells Light-emitting Diodes
Language英語English
DOI10.1016/j.pquantelec.2022.100438
URLView the original
Volume86
Pages100438
WOS IDWOS:000907045000003
WOS SubjectEngineering, Electrical & Electronic ; Quantum Science & Technology ; Optics ; Physics, Applied
WOS Research AreaEngineering ; Physics ; Optics
Indexed BySCIE
Scopus ID2-s2.0-85142399410
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Document TypeReview article
CollectionINSTITUTE OF APPLIED PHYSICS AND MATERIALS ENGINEERING
Corresponding AuthorChen, Rui
Affiliation1.Department of Electrical and Electronic Engineering, Southern University of Science and Technology, Shenzhen, 518055, China
2.Institute of Applied Physics and Materials Engineering, University of Macau, Avenida da Universidade, Taipa, Macau, 999078, China
Recommended Citation
GB/T 7714
Zhang, Xuanyu,Wang, Xiongbin,Liu, Huan,et al. Defect engineering of metal halide perovskite optoelectronic devices[J]. Progress in Quantum Electronics, 2022, 86, 100438.
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