Residential College | false |
Status | 已發表Published |
A 124-to-152-GHz Power Amplifier Exploiting Chebyshev-Type Two-Section Wideband and Low-Loss Power-Combining Technique in 28-nm CMOS | |
Zhang, Jincheng1; Wang, Yujia1; Chen, Yong2; Ren, Junyan1; Ma, Shunli1 | |
2022-12-29 | |
Source Publication | IEEE Transactions on Microwave Theory and Techniques |
ISSN | 0018-9480 |
Volume | 71Issue:5Pages:1852-1865 |
Abstract | This article presents a high-power wideband power amplifier (PA) with a four-way power-combining technique for D -band high-resolution radar. The power combiner is based on a two-section Chebyshev impedance converter to achieve a large bandwidth (BW) and is realized with slow wave coplanar waveguides (S-CPWs) to reduce the insertion loss and chip area. Therefore, our developed technique can provide broadband and low-loss power-combining scheme in a very compact size. A high-power PA with four-way combining has been fabricated in a 28-nm CMOS bulk technology. The unit PA uses low- k transformer-based coupled-resonator networks to realize wideband matching. The measured results of the PA prototype demonstrate the peak gain of 22.6 dB, the saturated output power of 16.2 dBm, and the peak power added efficiency of 8.6% at 135 GHz with a 3-dB BW of 28 GHz from 124 to 152 GHz. Meanwhile, the total area of this PA die is merely 0.66 × 0.73 mm. |
Keyword | Chebyshev Cmos Coupled Resonator D-band Power Amplifier (Pa) Slow Wave Coplanar Waveguide (S-cpw) Transformer Two-section Wideband Power Combining |
DOI | 10.1109/TMTT.2022.3231599 |
URL | View the original |
Indexed By | SCIE |
Language | 英語English |
WOS Research Area | Engineering |
WOS Subject | Engineering, Electrical & Electronic |
WOS ID | WOS:000910216200001 |
Publisher | IEEE-INST ELECTRICAL ELECTRONICS ENGINEERS INC, 445 HOES LANE, PISCATAWAY, NJ 08855-4141 |
Scopus ID | 2-s2.0-85146232126 |
Fulltext Access | |
Citation statistics | |
Document Type | Journal article |
Collection | DEPARTMENT OF ELECTRICAL AND COMPUTER ENGINEERING THE STATE KEY LABORATORY OF ANALOG AND MIXED-SIGNAL VLSI (UNIVERSITY OF MACAU) INSTITUTE OF MICROELECTRONICS |
Corresponding Author | Ren, Junyan; Ma, Shunli |
Affiliation | 1.Fudan University, State Key Laboratory of Asic and System, Shanghai, 200433, China 2.University of Macau, State-Key Laboratory of Analog and Mixed-Signal Vlsi and IME/ECE-FST, Macao |
Recommended Citation GB/T 7714 | Zhang, Jincheng,Wang, Yujia,Chen, Yong,et al. A 124-to-152-GHz Power Amplifier Exploiting Chebyshev-Type Two-Section Wideband and Low-Loss Power-Combining Technique in 28-nm CMOS[J]. IEEE Transactions on Microwave Theory and Techniques, 2022, 71(5), 1852-1865. |
APA | Zhang, Jincheng., Wang, Yujia., Chen, Yong., Ren, Junyan., & Ma, Shunli (2022). A 124-to-152-GHz Power Amplifier Exploiting Chebyshev-Type Two-Section Wideband and Low-Loss Power-Combining Technique in 28-nm CMOS. IEEE Transactions on Microwave Theory and Techniques, 71(5), 1852-1865. |
MLA | Zhang, Jincheng,et al."A 124-to-152-GHz Power Amplifier Exploiting Chebyshev-Type Two-Section Wideband and Low-Loss Power-Combining Technique in 28-nm CMOS".IEEE Transactions on Microwave Theory and Techniques 71.5(2022):1852-1865. |
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