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A 124-to-152-GHz Power Amplifier Exploiting Chebyshev-Type Two-Section Wideband and Low-Loss Power-Combining Technique in 28-nm CMOS
Zhang, Jincheng1; Wang, Yujia1; Chen, Yong2; Ren, Junyan1; Ma, Shunli1
2022-12-29
Source PublicationIEEE Transactions on Microwave Theory and Techniques
ISSN0018-9480
Volume71Issue:5Pages:1852-1865
Abstract

This article presents a high-power wideband power amplifier (PA) with a four-way power-combining technique for D -band high-resolution radar. The power combiner is based on a two-section Chebyshev impedance converter to achieve a large bandwidth (BW) and is realized with slow wave coplanar waveguides (S-CPWs) to reduce the insertion loss and chip area. Therefore, our developed technique can provide broadband and low-loss power-combining scheme in a very compact size. A high-power PA with four-way combining has been fabricated in a 28-nm CMOS bulk technology. The unit PA uses low- k transformer-based coupled-resonator networks to realize wideband matching. The measured results of the PA prototype demonstrate the peak gain of 22.6 dB, the saturated output power of 16.2 dBm, and the peak power added efficiency of 8.6% at 135 GHz with a 3-dB BW of 28 GHz from 124 to 152 GHz. Meanwhile, the total area of this PA die is merely 0.66 × 0.73 mm.

KeywordChebyshev Cmos Coupled Resonator D-band Power Amplifier (Pa) Slow Wave Coplanar Waveguide (S-cpw) Transformer Two-section Wideband Power Combining
DOI10.1109/TMTT.2022.3231599
URLView the original
Indexed BySCIE
Language英語English
WOS Research AreaEngineering
WOS SubjectEngineering, Electrical & Electronic
WOS IDWOS:000910216200001
PublisherIEEE-INST ELECTRICAL ELECTRONICS ENGINEERS INC, 445 HOES LANE, PISCATAWAY, NJ 08855-4141
Scopus ID2-s2.0-85146232126
Fulltext Access
Citation statistics
Document TypeJournal article
CollectionDEPARTMENT OF ELECTRICAL AND COMPUTER ENGINEERING
THE STATE KEY LABORATORY OF ANALOG AND MIXED-SIGNAL VLSI (UNIVERSITY OF MACAU)
INSTITUTE OF MICROELECTRONICS
Corresponding AuthorRen, Junyan; Ma, Shunli
Affiliation1.Fudan University, State Key Laboratory of Asic and System, Shanghai, 200433, China
2.University of Macau, State-Key Laboratory of Analog and Mixed-Signal Vlsi and IME/ECE-FST, Macao
Recommended Citation
GB/T 7714
Zhang, Jincheng,Wang, Yujia,Chen, Yong,et al. A 124-to-152-GHz Power Amplifier Exploiting Chebyshev-Type Two-Section Wideband and Low-Loss Power-Combining Technique in 28-nm CMOS[J]. IEEE Transactions on Microwave Theory and Techniques, 2022, 71(5), 1852-1865.
APA Zhang, Jincheng., Wang, Yujia., Chen, Yong., Ren, Junyan., & Ma, Shunli (2022). A 124-to-152-GHz Power Amplifier Exploiting Chebyshev-Type Two-Section Wideband and Low-Loss Power-Combining Technique in 28-nm CMOS. IEEE Transactions on Microwave Theory and Techniques, 71(5), 1852-1865.
MLA Zhang, Jincheng,et al."A 124-to-152-GHz Power Amplifier Exploiting Chebyshev-Type Two-Section Wideband and Low-Loss Power-Combining Technique in 28-nm CMOS".IEEE Transactions on Microwave Theory and Techniques 71.5(2022):1852-1865.
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