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Unlocking hidden spins in centrosymmetric 1T transition metal dichalcogenides by vacancy-controlled spin-orbit scattering
Lu,Hengzhe1; Qi,Zhibin1; Huang,Yuqiang1; Cheng,Man1; Sheng,Feng1; Deng,Zhengkuan1; Chen,Shi2; Hua,Chenqiang3; He,Pimo1; Lu,Yunhao1; Zheng,Yi1,4
2023-04-25
Source PublicationPhysical Review B
ISSN2469-9950
Volume107Issue:16Pages:165419
Abstract

Spin current generation and manipulation remain the key challenge of spintronics, in which relativistic spin-orbit coupling (SOC) plays a ubiquitous role. In this paper, we demonstrate that hidden Rashba spins in the nonmagnetic, centrosymmetric lattice of multilayer SnSe2 can be efficiently activated by spin-orbit scattering introduced by Se vacancies. Via vacancy scattering, conduction electrons with hidden spin-momentum locked polarizations acquire out-of-plane magnetization components, which effectively break the chiral symmetry between the two Se sublattices of an SnSe2 monolayer when electron spins start precession in the strong built-in Rashba SOC field. The resulting spin separations are manifested in quantum transport as vacancy concentration- and temperature-dependent crossovers from weak antilocalization to weak localization, with the distinctive spin relaxation mechanism of the D'yakonov-Perel' type. In a nonlocal geometry, the generated spins exhibit a long diffusion length exceeding 5 μm, when fast momentum scattering protects the effective spin polarizations by driving the random-walk evolution of spin precessions subject to rapidly changing Rashba SOC field. Our study shows the great potential of two-dimensional systems with hidden-spin textures for spintronics.

DOI10.1103/PhysRevB.107.165419
URLView the original
Indexed BySCIE
Language英語English
WOS Research AreaMaterials Science ; Physics
WOS SubjectMaterials Science, Multidisciplinary ; Physics, Applied ; Physics, Condensed Matter
WOS IDWOS:000981079800001
PublisherAMER PHYSICAL SOC, ONE PHYSICS ELLIPSE, COLLEGE PK, MD 20740-3844
Scopus ID2-s2.0-85158819291
Fulltext Access
Citation statistics
Document TypeJournal article
CollectionINSTITUTE OF APPLIED PHYSICS AND MATERIALS ENGINEERING
Co-First AuthorLu,Hengzhe; Qi,Zhibin
Corresponding AuthorZheng,Yi
Affiliation1.Zhejiang Province Key Laboratory of Quantum Technology and Device,School of Physics,State Key Laboratory of Silicon Materials,Zhejiang University,Hangzhou,310027,China
2.Institute of Applied Physics and Materials Engineering,University of Macau,Macao
3.Beihang Hangzhou Innovation Institute Yuhang,Hangzhou,310023,China
4.Collaborative Innovation Centre of Advanced Microstructures,Nanjing University,Nanjing,210093,China
Recommended Citation
GB/T 7714
Lu,Hengzhe,Qi,Zhibin,Huang,Yuqiang,et al. Unlocking hidden spins in centrosymmetric 1T transition metal dichalcogenides by vacancy-controlled spin-orbit scattering[J]. Physical Review B, 2023, 107(16), 165419.
APA Lu,Hengzhe., Qi,Zhibin., Huang,Yuqiang., Cheng,Man., Sheng,Feng., Deng,Zhengkuan., Chen,Shi., Hua,Chenqiang., He,Pimo., Lu,Yunhao., & Zheng,Yi (2023). Unlocking hidden spins in centrosymmetric 1T transition metal dichalcogenides by vacancy-controlled spin-orbit scattering. Physical Review B, 107(16), 165419.
MLA Lu,Hengzhe,et al."Unlocking hidden spins in centrosymmetric 1T transition metal dichalcogenides by vacancy-controlled spin-orbit scattering".Physical Review B 107.16(2023):165419.
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