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Status | 已發表Published |
A 0.05-mm2 2.91-nJ/Decision Keyword-Spotting (KWS) Chip Featuring an Always-Retention 5T-SRAM in 28-nm CMOS | |
Tan,Fei1; Yu,Wei Han1; Un,Ka Fai1; Martins,Rui P.2; Mak,Pui In1 | |
2023-06-13 | |
Source Publication | IEEE Journal of Solid-State Circuits |
ISSN | 0018-9200 |
Volume | 59Issue:2Pages:626-635 |
Abstract | This article reports a keyword-spotting (KWS) chip for voice-controlled devices. It features a number of techniques to enhance the performance, area, and power efficiencies: 1) a fast-sampling convolutional neural network (FS-CNN) that eliminates the power-hungry feature extractors and reduces the decision latency; 2) an always-retention 5T-SRAM that features word-voltage switches to reduce the leakage power and single bitline (BL) operation to halve the SRAM read power compared to the typical 6T-SRAM; and 3) a high-resolution sparsity-aware computing (HR-SAC) unit that enhances the precision and output swing of the multiply–accumulate (MAC) computation. Benchmarking with the state-of-the-art, our KWS chip prototyped in 28-nm CMOS scores a $>$ 90% accuracy for the 11-class Google speech command dataset (GSCD) at 2.91 $\mu$ W, which corresponds to a 2.91-nJ energy/decision. The achieved latency is 2 ms/decision, and the core area is 0.05 ${\rm mm}^{2}$ , including the full KWS model. |
Keyword | 5t-sram Convolutional Neural Network (Cnn) Input Stationery Keyword Spotting (Kws) Low-leakage Memory Quantization Switched-capacitor Circuits |
DOI | 10.1109/JSSC.2023.3291376 |
URL | View the original |
Indexed By | SCIE |
Language | 英語English |
WOS Research Area | Engineering |
WOS Subject | Engineering ; Electrical & Electronic |
WOS ID | WOS:001030664000001 |
Publisher | IEEE-INST ELECTRICAL ELECTRONICS ENGINEERS INC, 445 HOES LANE, PISCATAWAY, NJ 08855-4141 |
Scopus ID | 2-s2.0-85164787573 |
Fulltext Access | |
Citation statistics | |
Document Type | Journal article |
Collection | THE STATE KEY LABORATORY OF ANALOG AND MIXED-SIGNAL VLSI (UNIVERSITY OF MACAU) Faculty of Science and Technology INSTITUTE OF MICROELECTRONICS DEPARTMENT OF ELECTRICAL AND COMPUTER ENGINEERING |
Corresponding Author | Yu,Wei Han |
Affiliation | 1.the State Key Laboratory of Analog and Mixed-Signal VLSI, the Institute of Microelectronics, the Faculty of Science and Technology, and the Department of Electrical and Computer Engineering, University of Macau, Macau, China 2.State Key Laboratory of Analog and MixedSignal VLSI, Institute of Microelectronics, Faculty of Science and Technology, Department of Electrical and Computer Engineering, University of Macau, and Instituto Superior Tcnico, Universidade de Lisboa, Portugal |
First Author Affilication | Faculty of Science and Technology |
Corresponding Author Affilication | Faculty of Science and Technology |
Recommended Citation GB/T 7714 | Tan,Fei,Yu,Wei Han,Un,Ka Fai,et al. A 0.05-mm2 2.91-nJ/Decision Keyword-Spotting (KWS) Chip Featuring an Always-Retention 5T-SRAM in 28-nm CMOS[J]. IEEE Journal of Solid-State Circuits, 2023, 59(2), 626-635. |
APA | Tan,Fei., Yu,Wei Han., Un,Ka Fai., Martins,Rui P.., & Mak,Pui In (2023). A 0.05-mm2 2.91-nJ/Decision Keyword-Spotting (KWS) Chip Featuring an Always-Retention 5T-SRAM in 28-nm CMOS. IEEE Journal of Solid-State Circuits, 59(2), 626-635. |
MLA | Tan,Fei,et al."A 0.05-mm2 2.91-nJ/Decision Keyword-Spotting (KWS) Chip Featuring an Always-Retention 5T-SRAM in 28-nm CMOS".IEEE Journal of Solid-State Circuits 59.2(2023):626-635. |
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