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A 0.05-mm2 2.91-nJ/Decision Keyword-Spotting (KWS) Chip Featuring an Always-Retention 5T-SRAM in 28-nm CMOS
Tan,Fei1; Yu,Wei Han1; Un,Ka Fai1; Martins,Rui P.2; Mak,Pui In1
2023-06-13
Source PublicationIEEE Journal of Solid-State Circuits
ISSN0018-9200
Volume59Issue:2Pages:626-635
Abstract

This article reports a keyword-spotting (KWS) chip for voice-controlled devices. It features a number of techniques to enhance the performance, area, and power efficiencies: 1) a fast-sampling convolutional neural network (FS-CNN) that eliminates the power-hungry feature extractors and reduces the decision latency; 2) an always-retention 5T-SRAM that features word-voltage switches to reduce the leakage power and single bitline (BL) operation to halve the SRAM read power compared to the typical 6T-SRAM; and 3) a high-resolution sparsity-aware computing (HR-SAC) unit that enhances the precision and output swing of the multiply–accumulate (MAC) computation. Benchmarking with the state-of-the-art, our KWS chip prototyped in 28-nm CMOS scores a $>$ 90% accuracy for the 11-class Google speech command dataset (GSCD) at 2.91 $\mu$ W, which corresponds to a 2.91-nJ energy/decision. The achieved latency is 2 ms/decision, and the core area is 0.05 ${\rm mm}^{2}$ , including the full KWS model.

Keyword5t-sram Convolutional Neural Network (Cnn) Input Stationery Keyword Spotting (Kws) Low-leakage Memory Quantization Switched-capacitor Circuits
DOI10.1109/JSSC.2023.3291376
URLView the original
Indexed BySCIE
Language英語English
WOS Research AreaEngineering
WOS SubjectEngineering ; Electrical & Electronic
WOS IDWOS:001030664000001
PublisherIEEE-INST ELECTRICAL ELECTRONICS ENGINEERS INC, 445 HOES LANE, PISCATAWAY, NJ 08855-4141
Scopus ID2-s2.0-85164787573
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Citation statistics
Document TypeJournal article
CollectionTHE STATE KEY LABORATORY OF ANALOG AND MIXED-SIGNAL VLSI (UNIVERSITY OF MACAU)
Faculty of Science and Technology
INSTITUTE OF MICROELECTRONICS
DEPARTMENT OF ELECTRICAL AND COMPUTER ENGINEERING
Corresponding AuthorYu,Wei Han
Affiliation1.the State Key Laboratory of Analog and Mixed-Signal VLSI, the Institute of Microelectronics, the Faculty of Science and Technology, and the Department of Electrical and Computer Engineering, University of Macau, Macau, China
2.State Key Laboratory of Analog and MixedSignal VLSI, Institute of Microelectronics, Faculty of Science and Technology, Department of Electrical and Computer Engineering, University of Macau, and Instituto Superior Tcnico, Universidade de Lisboa, Portugal
First Author AffilicationFaculty of Science and Technology
Corresponding Author AffilicationFaculty of Science and Technology
Recommended Citation
GB/T 7714
Tan,Fei,Yu,Wei Han,Un,Ka Fai,et al. A 0.05-mm2 2.91-nJ/Decision Keyword-Spotting (KWS) Chip Featuring an Always-Retention 5T-SRAM in 28-nm CMOS[J]. IEEE Journal of Solid-State Circuits, 2023, 59(2), 626-635.
APA Tan,Fei., Yu,Wei Han., Un,Ka Fai., Martins,Rui P.., & Mak,Pui In (2023). A 0.05-mm2 2.91-nJ/Decision Keyword-Spotting (KWS) Chip Featuring an Always-Retention 5T-SRAM in 28-nm CMOS. IEEE Journal of Solid-State Circuits, 59(2), 626-635.
MLA Tan,Fei,et al."A 0.05-mm2 2.91-nJ/Decision Keyword-Spotting (KWS) Chip Featuring an Always-Retention 5T-SRAM in 28-nm CMOS".IEEE Journal of Solid-State Circuits 59.2(2023):626-635.
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