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10.7 A Single-Channel 70dB-SNDR 100MHz-BW 4th-Order Noise-Shaping Pipeline SAR ADC with Residue Amplifier Error Shaping
Yanbo Zhang1,2; Junyan Hao1,2; Shubin Liu2; Zhangming Zhu2; Yan Zhu1; Chi Hang Chan1; R. P. Martins1,3
2023-03-23
Conference Name2023 IEEE International Solid-State Circuits Conference (ISSCC)
Source PublicationDigest of Technical Papers - IEEE International Solid-State Circuits Conference
Volume2023-February
Pages178-180
Conference Date19-23 February 2023
Conference PlaceSan Francisco, CA, USA
CountryUnited States
PublisherInstitute of Electrical and Electronics Engineers Inc.
Abstract

Emerging wireless standards demand ADCs with hundred megahertz (MHz) bandwidth (BW) with an inband dynamic range (DR) better than 60textdB. Continuous-time sigma-delta modulators can accommodate a high DR under low OSR for a wideband target [1]. Nevertheless, power-hungry integrators limit the energy efficiency of CTSDMs with a best reported sim 166textdB Schreier textFoM(textFoMs), while suffering from the STF peaking issue. Noise-shaping SAR (NS-SAR) ADCs are free from the aforementioned constraints, and well-suited to multi-standard wireless communication systems with an energy-efficient, fully passive integrator and an easily configurable architecture. Furthermore by timeInterleaving the NS-SAR (TINS-SAR), the BW boosts to 80textMHz with sim 66textdB SNDR, maintaining an outstanding efficiency of 171.2 textFoMs [2]. However, the NS order and efficiency are difficult to enhance due to the lack of active summation nodes, limiting the achievable SNR and DR. Moreover, the necessitated coarse-fine quantization and midway feedback scheme [3] textprevent a high interleaving factor in the TINS -SAR ADC, thus holding back the BW from a further push. Rather than TI, hybridizing the pipeline with NS-SAR (NS-PiSAR) also can extend the BW while simultaneously enabling a high NSefficiency [4]. Previous arts demonstrate a 1 textst -order NS-PiSAR ADC with a40textMHz BW and sim 75textdB SNDR, but requiring a background-calibrated residue amplifier (RA). When pursuing hundred MHz BW, the impairments from the RA are a bottleneck. This work presents a single-channel NS-PiSAR ADC with effective 4 textth -order NS, achieving a peak SNDR of 70. 15textdB over 100textMHz BW. With a one-time-only trimming, the ADC is robust under VT variations.

DOI10.1109/ISSCC42615.2023.10067689
URLView the original
Language英語English
Scopus ID2-s2.0-85151652880
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Document TypeConference paper
CollectionINSTITUTE OF MICROELECTRONICS
DEPARTMENT OF ELECTRICAL AND COMPUTER ENGINEERING
Affiliation1.University of Macau,Macao
2.Xidian University,Xi'an,China
3.Lnstituto Superior Tecnico/University of Lisboa,Lisbon,Portugal
First Author AffilicationUniversity of Macau
Recommended Citation
GB/T 7714
Yanbo Zhang,Junyan Hao,Shubin Liu,et al. 10.7 A Single-Channel 70dB-SNDR 100MHz-BW 4th-Order Noise-Shaping Pipeline SAR ADC with Residue Amplifier Error Shaping[C]:Institute of Electrical and Electronics Engineers Inc., 2023, 178-180.
APA Yanbo Zhang., Junyan Hao., Shubin Liu., Zhangming Zhu., Yan Zhu., Chi Hang Chan., & R. P. Martins (2023). 10.7 A Single-Channel 70dB-SNDR 100MHz-BW 4th-Order Noise-Shaping Pipeline SAR ADC with Residue Amplifier Error Shaping. Digest of Technical Papers - IEEE International Solid-State Circuits Conference, 2023-February, 178-180.
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