| Residential College | false |
| Status | 已發表Published |
| Beryllium Assisted p-Type Doping for ZnO Homejunction Light-Emitting Devices | |
Anqi Chen1; Hai Zhu1; Yanyan Wu1; Mingming Chen2; Yuan Zhu1; Xuchun Gui1; TANG ZIKANG1,3
| |
| 2016-07 | |
| Source Publication | Adv. Funct. Mater
 |
| Volume | 26Issue:21 |
| Document Type | Journal article |
| Collection | INSTITUTE OF APPLIED PHYSICS AND MATERIALS ENGINEERING |
| Affiliation | 1.State Key Laboratory of Optoelectronic Materials and Technologies, School of Physics and Enineering, Sun Yat-Sen University, Guangzhou, 510275 China 2.Faculty of Science, Jiangsu University, Jiangsu,212013 China 3.The Institute of Applied Physics and Materials Engineering, University of Macau, Avenida da Universidade, Taipa, Macau |
| Recommended Citation GB/T 7714 | Anqi Chen,Hai Zhu,Yanyan Wu,et al. Beryllium Assisted p-Type Doping for ZnO Homejunction Light-Emitting Devices[J]. Adv. Funct. Mater, 2016, 26(21). |
| APA | Anqi Chen., Hai Zhu., Yanyan Wu., Mingming Chen., Yuan Zhu., Xuchun Gui., & TANG ZIKANG (2016). Beryllium Assisted p-Type Doping for ZnO Homejunction Light-Emitting Devices. Adv. Funct. Mater, 26(21). |
| MLA | Anqi Chen,et al."Beryllium Assisted p-Type Doping for ZnO Homejunction Light-Emitting Devices".Adv. Funct. Mater 26.21(2016). |
| Files in This Item: | There are no files associated with this item. | |||||
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