Residential College | false |
Status | 已發表Published |
The role of Be incorporation in the modulation of the N doping ZnO | |
Mingming Chen1,2; Yuan Zhu1; Xu Ji1; Anqi Chen1; Longxing Su1; Zhen Shen1; Chunlei Yang3; Rong Xiang1; Xuchun Gui1; Feng Huang1; TANG ZIKANG1,4 | |
2015-02 | |
Source Publication | Journal of Alloys and Compounds |
Document Type | Journal article |
Collection | INSTITUTE OF APPLIED PHYSICS AND MATERIALS ENGINEERING |
Affiliation | 1.State Key Laboratory of Optoelectronic Materials and Technologies, School of Physics and Engineering, Sun Yat-Sen University, Guangzhou 510275, China 2.Faculty of Science, Jiangsu University, Zhenjiang, Jiangsu 212013, China 3.Center for Photovoltaics and Solar Energy, Shen Zhen Institutes of Advanced Technology, Chinese Academy of Sciences, Shen Zhen, China 4.Department of Physics, Hong Kong University of Science and Technology, Clear Water Bay, Kowloon, Hong Kong, China |
Recommended Citation GB/T 7714 | Mingming Chen,Yuan Zhu,Xu Ji,et al. The role of Be incorporation in the modulation of the N doping ZnO[J]. Journal of Alloys and Compounds, 2015. |
APA | Mingming Chen., Yuan Zhu., Xu Ji., Anqi Chen., Longxing Su., Zhen Shen., Chunlei Yang., Rong Xiang., Xuchun Gui., Feng Huang., & TANG ZIKANG (2015). The role of Be incorporation in the modulation of the N doping ZnO. Journal of Alloys and Compounds. |
MLA | Mingming Chen,et al."The role of Be incorporation in the modulation of the N doping ZnO".Journal of Alloys and Compounds (2015). |
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