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Realization of p-type conduction in undoped MgxZn1− xO thin films by controlling Mg content
Y. F. Li1; B. Yao1; Y. M. Lu1; Z. P. Wei1; Y. Q. Gai1; C. J. Zheng1; Z. Z. Zhang1; B. H. Li1; D. Z. Shen1; X. W. Fan1; TANG ZIKANG2
2017-12
Source PublicationApplied physics letters
Document TypeJournal article
CollectionINSTITUTE OF APPLIED PHYSICS AND MATERIALS ENGINEERING
Affiliation1.Laboratory of Excited State Processes, Changchun Institute of Optics, Fine Mechanics and Physics, Chinese Academy of Sciences, Changchun 130033, People’s Republic of China and Graduate School of Chinese Academy of Sciences, Beijing 100039, People’s Republi
2.Department of Physics, Hong Kong University of Science & Technology, Clear Water Bay, Kowloon, Hong Kong, People’s Republic of China
Recommended Citation
GB/T 7714
Y. F. Li,B. Yao,Y. M. Lu,et al. Realization of p-type conduction in undoped MgxZn1− xO thin films by controlling Mg content[J]. Applied physics letters, 2017.
APA Y. F. Li., B. Yao., Y. M. Lu., Z. P. Wei., Y. Q. Gai., C. J. Zheng., Z. Z. Zhang., B. H. Li., D. Z. Shen., X. W. Fan., & TANG ZIKANG (2017). Realization of p-type conduction in undoped MgxZn1− xO thin films by controlling Mg content. Applied physics letters.
MLA Y. F. Li,et al."Realization of p-type conduction in undoped MgxZn1− xO thin films by controlling Mg content".Applied physics letters (2017).
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