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Corrigendum to:“Growth and visible photoluminescence of highly oriented (1 0 0) zinc oxide film synthesized on silicon by plasma immersion ion implantation”:[Materials Science …
YF Mei; Ricky KY Fu; GG Siu; Paul K Chu; ZM Li; CL Yang; WK Ge; TANG ZIKANG; WY Cheung; SP Wong
2005-08
Source PublicationMaterials Science in Semiconductor Processing
Document TypeJournal article
CollectionINSTITUTE OF APPLIED PHYSICS AND MATERIALS ENGINEERING
Recommended Citation
GB/T 7714
YF Mei,Ricky KY Fu,GG Siu,et al. Corrigendum to:“Growth and visible photoluminescence of highly oriented (1 0 0) zinc oxide film synthesized on silicon by plasma immersion ion implantation”:[Materials Science …[J]. Materials Science in Semiconductor Processing, 2005.
APA YF Mei., Ricky KY Fu., GG Siu., Paul K Chu., ZM Li., CL Yang., WK Ge., TANG ZIKANG., WY Cheung., & SP Wong (2005). Corrigendum to:“Growth and visible photoluminescence of highly oriented (1 0 0) zinc oxide film synthesized on silicon by plasma immersion ion implantation”:[Materials Science …. Materials Science in Semiconductor Processing.
MLA YF Mei,et al."Corrigendum to:“Growth and visible photoluminescence of highly oriented (1 0 0) zinc oxide film synthesized on silicon by plasma immersion ion implantation”:[Materials Science …".Materials Science in Semiconductor Processing (2005).
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