UM  > INSTITUTE OF APPLIED PHYSICS AND MATERIALS ENGINEERING
Residential Collegefalse
Status已發表Published
Orbital Origin of the Intrinsic Planar Hall Effect
Wang, Hui1,2; Huang, Yue Xin1,3,4; Liu, Huiying1,5; Feng, Xiaolong1,6; Zhu, Jiaojiao1; Wu, Weikang1,7; Xiao, Cong8,9,10; Yang, Shengyuan A.8
2024-02-02
Source PublicationPhysical Review Letters
ISSN0031-9007
Volume132Issue:5Pages:056301
Abstract

Recent experiments reported an antisymmetric planar Hall effect, where the Hall current is odd in the in plane magnetic field and scales linearly with both electric and magnetic fields applied. Existing theories rely exclusively on a spin origin, which requires spin-orbit coupling to take effect. Here, we develop a general theory for the intrinsic planar Hall effect (IPHE), highlighting a previously unknown orbital mechanism and connecting it to a band geometric quantity - the anomalous orbital polarizability (AOP). Importantly, the orbital mechanism does not request spin-orbit coupling, so sizable IPHE can occur and is dominated by an orbital contribution in systems with weak spin-orbit coupling. Combined with first-principles calculations, we demonstrate our theory with quantitative evaluation for bulk materials TaSb2, NbAs2, and SrAs3. We further show that AOP and its associated orbital IPHE can be greatly enhanced at topological band crossings, offering a new way to probe topological materials.

DOI10.1103/PhysRevLett.132.056301
URLView the original
Indexed BySCIE
Language英語English
WOS Research AreaPhysics
WOS SubjectPhysics, Multidisciplinary
WOS IDWOS:001181999900009
PublisherAMER PHYSICAL SOCONE PHYSICS ELLIPSE, COLLEGE PK, MD 20740-3844
Scopus ID2-s2.0-85183977003
Fulltext Access
Citation statistics
Document TypeJournal article
CollectionINSTITUTE OF APPLIED PHYSICS AND MATERIALS ENGINEERING
Corresponding AuthorXiao, Cong
Affiliation1.Research Laboratory for Quantum Materials, Singapore University of Technology and Design, Singapore, 487372, Singapore
2.Division of Physics and Applied Physics, School of Physical and Mathematical Sciences, Nanyang Technological University, Singapore, 637371, Singapore
3.School of Sciences, Great Bay University, Dongguan, 523000, China
4.Great Bay Institute for Advanced Study, Dongguan, 523000, China
5.School of Physics, Beihang University, Beijing, 100191, China
6.Max Planck Institute for Chemical Physics of Solids, Dresden, Nöthnitzer Strasse 40, D-01187, Germany
7.Key Laboratory for Liquid-Solid Structural Evolution and Processing of Materials, Ministry of Education, Shandong University, Jinan, 250061, China
8.Institute of Applied Physics and Materials Engineering, University of Macau, Macao
9.Department of Physics, The University of Hong Kong, Hong Kong, Hong Kong
10.HKU-UCAS Joint Institute of Theoretical and Computational Physics at Hong Kong, Hong Kong, Hong Kong
Corresponding Author AffilicationINSTITUTE OF APPLIED PHYSICS AND MATERIALS ENGINEERING
Recommended Citation
GB/T 7714
Wang, Hui,Huang, Yue Xin,Liu, Huiying,et al. Orbital Origin of the Intrinsic Planar Hall Effect[J]. Physical Review Letters, 2024, 132(5), 056301.
APA Wang, Hui., Huang, Yue Xin., Liu, Huiying., Feng, Xiaolong., Zhu, Jiaojiao., Wu, Weikang., Xiao, Cong., & Yang, Shengyuan A. (2024). Orbital Origin of the Intrinsic Planar Hall Effect. Physical Review Letters, 132(5), 056301.
MLA Wang, Hui,et al."Orbital Origin of the Intrinsic Planar Hall Effect".Physical Review Letters 132.5(2024):056301.
Files in This Item:
There are no files associated with this item.
Related Services
Recommend this item
Bookmark
Usage statistics
Export to Endnote
Google Scholar
Similar articles in Google Scholar
[Wang, Hui]'s Articles
[Huang, Yue Xin]'s Articles
[Liu, Huiying]'s Articles
Baidu academic
Similar articles in Baidu academic
[Wang, Hui]'s Articles
[Huang, Yue Xin]'s Articles
[Liu, Huiying]'s Articles
Bing Scholar
Similar articles in Bing Scholar
[Wang, Hui]'s Articles
[Huang, Yue Xin]'s Articles
[Liu, Huiying]'s Articles
Terms of Use
No data!
Social Bookmark/Share
All comments (0)
No comment.
 

Items in the repository are protected by copyright, with all rights reserved, unless otherwise indicated.