Residential College | false |
Status | 已發表Published |
Orbital Origin of the Intrinsic Planar Hall Effect | |
Wang, Hui1,2; Huang, Yue Xin1,3,4; Liu, Huiying1,5; Feng, Xiaolong1,6; Zhu, Jiaojiao1; Wu, Weikang1,7; Xiao, Cong8,9,10; Yang, Shengyuan A.8 | |
2024-02-02 | |
Source Publication | Physical Review Letters |
ISSN | 0031-9007 |
Volume | 132Issue:5Pages:056301 |
Abstract | Recent experiments reported an antisymmetric planar Hall effect, where the Hall current is odd in the in plane magnetic field and scales linearly with both electric and magnetic fields applied. Existing theories rely exclusively on a spin origin, which requires spin-orbit coupling to take effect. Here, we develop a general theory for the intrinsic planar Hall effect (IPHE), highlighting a previously unknown orbital mechanism and connecting it to a band geometric quantity - the anomalous orbital polarizability (AOP). Importantly, the orbital mechanism does not request spin-orbit coupling, so sizable IPHE can occur and is dominated by an orbital contribution in systems with weak spin-orbit coupling. Combined with first-principles calculations, we demonstrate our theory with quantitative evaluation for bulk materials TaSb2, NbAs2, and SrAs3. We further show that AOP and its associated orbital IPHE can be greatly enhanced at topological band crossings, offering a new way to probe topological materials. |
DOI | 10.1103/PhysRevLett.132.056301 |
URL | View the original |
Indexed By | SCIE |
Language | 英語English |
WOS Research Area | Physics |
WOS Subject | Physics, Multidisciplinary |
WOS ID | WOS:001181999900009 |
Publisher | AMER PHYSICAL SOCONE PHYSICS ELLIPSE, COLLEGE PK, MD 20740-3844 |
Scopus ID | 2-s2.0-85183977003 |
Fulltext Access | |
Citation statistics | |
Document Type | Journal article |
Collection | INSTITUTE OF APPLIED PHYSICS AND MATERIALS ENGINEERING |
Corresponding Author | Xiao, Cong |
Affiliation | 1.Research Laboratory for Quantum Materials, Singapore University of Technology and Design, Singapore, 487372, Singapore 2.Division of Physics and Applied Physics, School of Physical and Mathematical Sciences, Nanyang Technological University, Singapore, 637371, Singapore 3.School of Sciences, Great Bay University, Dongguan, 523000, China 4.Great Bay Institute for Advanced Study, Dongguan, 523000, China 5.School of Physics, Beihang University, Beijing, 100191, China 6.Max Planck Institute for Chemical Physics of Solids, Dresden, Nöthnitzer Strasse 40, D-01187, Germany 7.Key Laboratory for Liquid-Solid Structural Evolution and Processing of Materials, Ministry of Education, Shandong University, Jinan, 250061, China 8.Institute of Applied Physics and Materials Engineering, University of Macau, Macao 9.Department of Physics, The University of Hong Kong, Hong Kong, Hong Kong 10.HKU-UCAS Joint Institute of Theoretical and Computational Physics at Hong Kong, Hong Kong, Hong Kong |
Corresponding Author Affilication | INSTITUTE OF APPLIED PHYSICS AND MATERIALS ENGINEERING |
Recommended Citation GB/T 7714 | Wang, Hui,Huang, Yue Xin,Liu, Huiying,et al. Orbital Origin of the Intrinsic Planar Hall Effect[J]. Physical Review Letters, 2024, 132(5), 056301. |
APA | Wang, Hui., Huang, Yue Xin., Liu, Huiying., Feng, Xiaolong., Zhu, Jiaojiao., Wu, Weikang., Xiao, Cong., & Yang, Shengyuan A. (2024). Orbital Origin of the Intrinsic Planar Hall Effect. Physical Review Letters, 132(5), 056301. |
MLA | Wang, Hui,et al."Orbital Origin of the Intrinsic Planar Hall Effect".Physical Review Letters 132.5(2024):056301. |
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