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A new ferromagnetic semiconductor system of Eu1−xSrxAgP (x=0.0−0.6) compounds: Crystallographic, magnetic, and magneto-resistive properties
Zhao, Qian1; Sun, Kaitong1; Xia, Junchao2; Li, Hai Feng1
2024-06-01
Source PublicationMaterials Today Communications
ISSN2352-4928
Volume39Pages:109197
Abstract

Adjusting chemical pressure through doping is a highly effective method for customizing the chemical and physical properties of materials, along with their respective phase diagrams, thereby uncovering novel quantum phenomena. Here, we successfully synthesized Sr-doped EuSrAgP (x=0.0−0.6) and conducted a comprehensive investigation involving crystallography, magnetization, heat capacity, and magnetoresistance. Utilizing X-ray diffraction and PPMS DynaCool measurements, we studied EuSrAgP in detail. The hexagonal structure of parent EuAgP at room temperature, with the P6/mmc space group, remains unaltered, while the lattice constants expand. The magnetic phase transition from paramagnetism to weak ferromagnetism, as temperature decreases, is suppressed through the gradual introduction of strontium doping. Heat capacity measurements reveal a shift from magnon-dominated to predominantly phonon and electron contributions near the ferromagnetic phase with increasing doping levels. The resistivity–temperature relationship displays distinct characteristics, emphasizing the impact of Sr doping on modifying charge transport. Magnetoresistance measurements uncover novel phenomena, illustrating the adjustability of magnetoresistance through Sr doping. Notably, Sr doping results in both positive magnetoresistance (up to 20%) and negative magnetoresistance (approximately -60%). The resistivity and magnetic phase diagram were established for the first time, revealing the pronounced feasibility of Sr doping in modulating EuAgP's resistivity. This study has provided valuable insights into the intricate interplay between structural modifications and diverse physical properties. The potential for technological advancements and the exploration of novel quantum states make Sr-doped EuSrAgP a compelling subject for continued research in the field of applied physics.

KeywordElectronic States In Doped Compounds Future Technological Applications Magnetic Tunability Magnetoresistance Phenomena Sr-doped Euagp
DOI10.1016/j.mtcomm.2024.109197
URLView the original
Language英語English
PublisherElsevier Ltd
Scopus ID2-s2.0-85193241214
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Document TypeJournal article
CollectionINSTITUTE OF APPLIED PHYSICS AND MATERIALS ENGINEERING
Corresponding AuthorLi, Hai Feng
Affiliation1.Institute of Applied Physics and Materials Engineering, University of Macau, Avenida da Universidade, Taipa, 999078, Macao
2.School of Materials Science and Engineering, Chang'an University, Xi'an, 710061, China
First Author AffilicationINSTITUTE OF APPLIED PHYSICS AND MATERIALS ENGINEERING
Corresponding Author AffilicationINSTITUTE OF APPLIED PHYSICS AND MATERIALS ENGINEERING
Recommended Citation
GB/T 7714
Zhao, Qian,Sun, Kaitong,Xia, Junchao,et al. A new ferromagnetic semiconductor system of Eu1−xSrxAgP (x=0.0−0.6) compounds: Crystallographic, magnetic, and magneto-resistive properties[J]. Materials Today Communications, 2024, 39, 109197.
APA Zhao, Qian., Sun, Kaitong., Xia, Junchao., & Li, Hai Feng (2024). A new ferromagnetic semiconductor system of Eu1−xSrxAgP (x=0.0−0.6) compounds: Crystallographic, magnetic, and magneto-resistive properties. Materials Today Communications, 39, 109197.
MLA Zhao, Qian,et al."A new ferromagnetic semiconductor system of Eu1−xSrxAgP (x=0.0−0.6) compounds: Crystallographic, magnetic, and magneto-resistive properties".Materials Today Communications 39(2024):109197.
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