Crystal, ferromagnetism, and magnetoresistance with sign reversal in a EuAgP semiconductor

doi:https://doi.org/10.1016/j.jmat.2024.02.012

UM > INSTITUTE OF APPLIED PHYSICS AND MATERIALS ENGINEERING

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	Crystal, ferromagnetism, and magnetoresistance with sign reversal in a EuAgP semiconductor
	Zhao Qian1 ; Sun Kaitong1 ; Wu Si 2; LI HAIFENG1
	2024-02
Source Publication	Journal of Materiomics
ISSN	2352-8478
Abstract	We synthesized the ferromagnetic EuAgP semiconductor and conducted a comprehensive study of its crystalline, magnetic, heat capacity, band gap, and magnetoresistance properties. Our investigation utilized a combination of X-ray diffraction, optical, and PPMS DynaCool measurements. EuAgP adopts a hexagonal structure with the P63/mmc space group. As the temperature decreases, it undergoes a magnetic phase transition from high-temperature paramagnetism to low-temperature ferromagnetism. We determined the ferromagnetic transition temperature to be TC = 16.45(1) K by fitting the measured magnetic susceptibility using a Curie-Weiss law. Heat capacity analysis of EuAgP considered contributions from electrons, phonons, and magnons, revealing η = 0.03 J/(mol·K2), indicative of semiconducting behavior. Additionally, we calculated a band gap of ∼1.324(4) eV based on absorption spectrum measurements. The resistivity versus temperature of EuAgP measured in the absence of an applied magnetic field shows a pronounced peak around TC, which diminishes rapidly with increasing applied magnetic fields, ranging from 1 to 14 T. An intriguing phenomenon emerges in the form of a distinct magnetoresistance transition, shifting from positive (e.g., 1.95% at 300 K and 14 T) to negative (e.g., −30.73% at 14.25 K and 14 T) as the temperature decreases. This behavior could be attributed to spin-disordered scattering.
Keyword	Erromagnetic Semiconductoreuagpmagnetoresistancemagnetizationheat Capacity
DOI	https://doi.org/10.1016/j.jmat.2024.02.012
URL	View the original
Indexed By	SCIE
Language	英語English
Publisher	ScienceDirect
Fulltext Access	View Full-Text via DOI
Citation statistics
Document Type	Journal article
Collection	INSTITUTE OF APPLIED PHYSICS AND MATERIALS ENGINEERING
Corresponding Author	LI HAIFENG
Affiliation	1.Institute of Applied Physics and Materials Engineering, University of Macau, Avenida da Universidade, Taipa, Macao SAR, 999078, China 2.School of Physical Science and Technology, Ningbo University, Ningbo, 315211, Zhejiang, China
First Author Affilication	INSTITUTE OF APPLIED PHYSICS AND MATERIALS ENGINEERING
Corresponding Author Affilication	INSTITUTE OF APPLIED PHYSICS AND MATERIALS ENGINEERING
Recommended Citation GB/T 7714	Zhao Qian,Sun Kaitong,Wu Si,et al. Crystal, ferromagnetism, and magnetoresistance with sign reversal in a EuAgP semiconductor[J]. Journal of Materiomics, 2024.
APA	Zhao Qian., Sun Kaitong., Wu Si., & LI HAIFENG (2024). Crystal, ferromagnetism, and magnetoresistance with sign reversal in a EuAgP semiconductor. Journal of Materiomics.
MLA	Zhao Qian,et al."Crystal, ferromagnetism, and magnetoresistance with sign reversal in a EuAgP semiconductor".Journal of Materiomics (2024).

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