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A 5T-SRAM Based Computing-in-Memory Macro Featuring Partial Sum Boosting and Analog Non-Uniform Quantization
Xin, Guoqiang1; Tan, Fei1; Li, Junde1; Chen, Junren1; Yu, Wei Han1; Un, Ka Fai1; Martins, Rui P.1,2; Mak, Pui In1
2024-11
Conference Name67th IEEE International Midwest Symposium on Circuits and Systems, MWSCAS 2024
Source PublicationMidwest Symposium on Circuits and Systems Conference Proceedings; 2024 IEEE 67TH INTERNATIONAL MIDWEST SYMPOSIUM ON CIRCUITS AND SYSTEMS, MWSCAS 2024
Pages882-887
Conference Date11-14 August 2024
Conference PlaceSpringfield, Massachusetts
CountryUSA
PublisherInstitute of Electrical and Electronics Engineers Inc.
Abstract

Analog computing-in-memory (CIM) macro has been widely used in various machine learning (ML) applications, which parallelly perform energy- and areaefficient matrix-vector multiplication (MVM) operations. Compared with digital CIM, analog CIM has shown great efficiency on multi-bit MVM computations. However, the analog approaches accumulate the MVM results on the voltage domain, different accumulation lengths and data sparsity cause distinct signal swing degradation and variation. Hence, the analog-to-digital converter (ADC) readout circuit requires more power and area to trade off with the noise and comparator offset. In this paper, we proposed a partial sum boosting (PSB) method to give 4.6× to 22.8× signal swing enhancement for multi-bit MVM, which mitigates severe ADC overhead for analog CIM. Furthermore, multi-bit 5T-SRAMs with diverse voltage supplies realize multi-bit uniform/non-uniform signand-magnitude (SNM) weight representation and save up to 38.8× SRAMs static power dissipation. The chip was fabricated in 28nm CMOS technology and measured a throughput density of 89.04 TOPS/mm2 and energy efficiency of 219.5 TOPS/W under 3-bit activation, 4-bit SNM weight with no truncation 5- bit partial sum readout condition. 

Keyword5t-sram Analog Non-uniform Quantization (Anuq) Computing-in-memory (Clm) Machine Learning (Ml) Matrix-vector Multiplication (Mvm) Partial Sum Boosting (Psb)
DOI10.1109/MWSCAS60917.2024.10658831
URLView the original
Indexed ByCPCI-S
Language英語English
WOS Research AreaComputer Science ; Engineering ; Telecommunications
WOS SubjectComputer Science, Information Systems ; Engineering, Electrical & Electronic ; Telecommunications
WOS IDWOS:001323549600182
Scopus ID2-s2.0-85204972272
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Citation statistics
Document TypeConference paper
CollectionFaculty of Science and Technology
THE STATE KEY LABORATORY OF ANALOG AND MIXED-SIGNAL VLSI (UNIVERSITY OF MACAU)
INSTITUTE OF MICROELECTRONICS
DEPARTMENT OF ELECTRICAL AND COMPUTER ENGINEERING
Corresponding AuthorYu, Wei Han
Affiliation1.The State-Key Laboratory of Analog and Mixed-Signal VLSI/IME, FST-ECE, University of Macau, Macao, Macao
2.The Instituto Superior Técnico, UL, Portugal
First Author AffilicationFaculty of Science and Technology
Corresponding Author AffilicationFaculty of Science and Technology
Recommended Citation
GB/T 7714
Xin, Guoqiang,Tan, Fei,Li, Junde,et al. A 5T-SRAM Based Computing-in-Memory Macro Featuring Partial Sum Boosting and Analog Non-Uniform Quantization[C]:Institute of Electrical and Electronics Engineers Inc., 2024, 882-887.
APA Xin, Guoqiang., Tan, Fei., Li, Junde., Chen, Junren., Yu, Wei Han., Un, Ka Fai., Martins, Rui P.., & Mak, Pui In (2024). A 5T-SRAM Based Computing-in-Memory Macro Featuring Partial Sum Boosting and Analog Non-Uniform Quantization. Midwest Symposium on Circuits and Systems Conference Proceedings; 2024 IEEE 67TH INTERNATIONAL MIDWEST SYMPOSIUM ON CIRCUITS AND SYSTEMS, MWSCAS 2024, 882-887.
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