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Helical dislocation-driven plasticity and flexible high-performance thermoelectric generator in α-Mg3Bi2 single crystals
Hu, Mingyuan1,2; Yang, Jianmin1; Wang, Yan1; Xia, Junchao1,3; Gan, Quan1; Yang, Shuhuan1,3; Xu, Juping4; Liu, Shulin4; Yin, Wen4; Jia, Baohai1; Xie, Lin1; Li, Haifeng3; He, Jiaqing1,2
2025-01-02
Source PublicationNature Communications
ISSN2041-1723
Volume16Issue:1Pages:128
Other Abstract

Inorganic plastic semiconductors play a crucial role in the realm of flexible electronics. In this study, we present a cost-effective plastic thermoelectric semimetal magnesium bismuthide (α-MgBi), exhibiting remarkable thermoelectric performance. Bulk single-crystalline α-MgBi exhibits considerable plastic deformation at room temperature, allowing for the fabrication of intricate shapes such as the letters “SUSTECH” and a flexible chain. Transmission electron microscopy, time-of-flight neutron diffraction, and chemical bonding theoretic analyses elucidate that the plasticity of α-MgBi stems from the helical dislocation-driven interlayer slip, small-sized Mg atoms induced weak interlayer Mg-Bi bonds, and low modulus of intralayer MgBi networks. Moreover, we achieve a power factor value of up to 26.2 µW cm K along the c-axis at room temperature in an n-type α-MgBi crystal. Our out-of-plane flexible thermoelectric generator exhibit a normalized power density of 8.1 μW cm K with a temperature difference of 7.3 K. This high-performance plastic thermoelectric semimetal promises to advance the field of flexible and deformable electronics.

DOI10.1038/s41467-024-55689-7
URLView the original
Indexed BySCIE
Language英語English
WOS Research AreaScience & Technology - Other Topics
WOS SubjectMultidisciplinary Sciences
WOS IDWOS:001389961400016
PublisherNATURE PORTFOLIOHEIDELBERGER PLATZ 3, BERLIN 14197, GERMANY
Scopus ID2-s2.0-85213975155
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Citation statistics
Document TypeJournal article
CollectionINSTITUTE OF APPLIED PHYSICS AND MATERIALS ENGINEERING
Corresponding AuthorHe, Jiaqing
Affiliation1.Shenzhen Key Laboratory of Thermoelectric Materials, Department of Physics, Southern University of Science and Technology, Shenzhen, 518055, China
2.Guangdong Provincial Key Laboratory of Advanced Thermoelectric Materials and Device Physics, Southern University of Science and Technology, Shenzhen, 518055, China
3.Institute of Applied Physics and Materials Engineering, University of Macau, Avenida da Universidade, Taipa, Macao SAR 999078, China
4.Spallation Neutron Source Science Center, Dongguan, 523803, China
Recommended Citation
GB/T 7714
Hu, Mingyuan,Yang, Jianmin,Wang, Yan,et al. Helical dislocation-driven plasticity and flexible high-performance thermoelectric generator in α-Mg3Bi2 single crystals[J]. Nature Communications, 2025, 16(1), 128.
APA Hu, Mingyuan., Yang, Jianmin., Wang, Yan., Xia, Junchao., Gan, Quan., Yang, Shuhuan., Xu, Juping., Liu, Shulin., Yin, Wen., Jia, Baohai., Xie, Lin., Li, Haifeng., & He, Jiaqing (2025). Helical dislocation-driven plasticity and flexible high-performance thermoelectric generator in α-Mg3Bi2 single crystals. Nature Communications, 16(1), 128.
MLA Hu, Mingyuan,et al."Helical dislocation-driven plasticity and flexible high-performance thermoelectric generator in α-Mg3Bi2 single crystals".Nature Communications 16.1(2025):128.
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