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Comprehensive analysis of MOSFET threshold voltage extraction method considering DIBL effect from 300 K down to 10 K
Ma, Zhizhao1; Su, Hao2; Lin, Yuhuan1; Zhou, Shenghua3; Zhou, Feichi1; Liu, Xiaoguang1; Lin, Longyang1; Li, Yida1; Chen, Kai1
2025-02-01
Source PublicationSolid-State Electronics
ISSN0038-1101
Volume224Pages:109045
Abstract

It is well known that different threshold voltage (V) extraction methods exhibit inconsistencies with respect to different drain voltage (V). This inconsistency becomes disruptive when temperature is considered for cryogenic applications such as quantum computing. This investigation examines various V extraction methods from room down to cryogenic temperatures, with a particular emphasis on how different V values combined with extraction methods behave as temperature decreases. For the first time, we find that the square root I method maintains consistency regardless of V, from 300 K all the way down to 10 K is identified. This provides a good insight into how the Drain-Induced Barrier Lowering (DIBL) effect changes with temperature, and positions the square root I method as a reliable tool for V extraction in cryogenic temperature.

KeywordCryogenic Dibl Extraction Method Threshold Voltage
DOI10.1016/j.sse.2024.109045
URLView the original
Indexed BySCIE
Language英語English
WOS Research AreaEngineering ; Physics
WOS SubjectEngineering, Electrical & Electronic ; Physics, Applied ; Physics, Condensed Matter
WOS IDWOS:001386331500001
PublisherElsevier Ltd
Scopus ID2-s2.0-85211476948
Fulltext Access
Citation statistics
Document TypeJournal article
CollectionDEPARTMENT OF ELECTRICAL AND COMPUTER ENGINEERING
THE STATE KEY LABORATORY OF ANALOG AND MIXED-SIGNAL VLSI (UNIVERSITY OF MACAU)
Corresponding AuthorChen, Kai
Affiliation1.Southern University of Science and Technology (SUSTech), Shenzhen, 518055, China
2.State Key Lab. of Analog and Mixed-Signal VLSI, IME/ECE of FST, University of Macau, China
3.International Quantum Academy, Shenzhen, 518048, China
Recommended Citation
GB/T 7714
Ma, Zhizhao,Su, Hao,Lin, Yuhuan,et al. Comprehensive analysis of MOSFET threshold voltage extraction method considering DIBL effect from 300 K down to 10 K[J]. Solid-State Electronics, 2025, 224, 109045.
APA Ma, Zhizhao., Su, Hao., Lin, Yuhuan., Zhou, Shenghua., Zhou, Feichi., Liu, Xiaoguang., Lin, Longyang., Li, Yida., & Chen, Kai (2025). Comprehensive analysis of MOSFET threshold voltage extraction method considering DIBL effect from 300 K down to 10 K. Solid-State Electronics, 224, 109045.
MLA Ma, Zhizhao,et al."Comprehensive analysis of MOSFET threshold voltage extraction method considering DIBL effect from 300 K down to 10 K".Solid-State Electronics 224(2025):109045.
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