Residential College | false |
Status | 即將出版Forthcoming |
Comprehensive analysis of MOSFET threshold voltage extraction method considering DIBL effect from 300 K down to 10 K | |
Ma, Zhizhao1; Su, Hao2; Lin, Yuhuan1; Zhou, Shenghua3; Zhou, Feichi1; Liu, Xiaoguang1; Lin, Longyang1; Li, Yida1; Chen, Kai1 | |
2025-02-01 | |
Source Publication | Solid-State Electronics |
ISSN | 0038-1101 |
Volume | 224Pages:109045 |
Abstract | It is well known that different threshold voltage (V) extraction methods exhibit inconsistencies with respect to different drain voltage (V). This inconsistency becomes disruptive when temperature is considered for cryogenic applications such as quantum computing. This investigation examines various V extraction methods from room down to cryogenic temperatures, with a particular emphasis on how different V values combined with extraction methods behave as temperature decreases. For the first time, we find that the square root I method maintains consistency regardless of V, from 300 K all the way down to 10 K is identified. This provides a good insight into how the Drain-Induced Barrier Lowering (DIBL) effect changes with temperature, and positions the square root I method as a reliable tool for V extraction in cryogenic temperature. |
Keyword | Cryogenic Dibl Extraction Method Threshold Voltage |
DOI | 10.1016/j.sse.2024.109045 |
URL | View the original |
Indexed By | SCIE |
Language | 英語English |
WOS Research Area | Engineering ; Physics |
WOS Subject | Engineering, Electrical & Electronic ; Physics, Applied ; Physics, Condensed Matter |
WOS ID | WOS:001386331500001 |
Publisher | Elsevier Ltd |
Scopus ID | 2-s2.0-85211476948 |
Fulltext Access | |
Citation statistics | |
Document Type | Journal article |
Collection | DEPARTMENT OF ELECTRICAL AND COMPUTER ENGINEERING THE STATE KEY LABORATORY OF ANALOG AND MIXED-SIGNAL VLSI (UNIVERSITY OF MACAU) |
Corresponding Author | Chen, Kai |
Affiliation | 1.Southern University of Science and Technology (SUSTech), Shenzhen, 518055, China 2.State Key Lab. of Analog and Mixed-Signal VLSI, IME/ECE of FST, University of Macau, China 3.International Quantum Academy, Shenzhen, 518048, China |
Recommended Citation GB/T 7714 | Ma, Zhizhao,Su, Hao,Lin, Yuhuan,et al. Comprehensive analysis of MOSFET threshold voltage extraction method considering DIBL effect from 300 K down to 10 K[J]. Solid-State Electronics, 2025, 224, 109045. |
APA | Ma, Zhizhao., Su, Hao., Lin, Yuhuan., Zhou, Shenghua., Zhou, Feichi., Liu, Xiaoguang., Lin, Longyang., Li, Yida., & Chen, Kai (2025). Comprehensive analysis of MOSFET threshold voltage extraction method considering DIBL effect from 300 K down to 10 K. Solid-State Electronics, 224, 109045. |
MLA | Ma, Zhizhao,et al."Comprehensive analysis of MOSFET threshold voltage extraction method considering DIBL effect from 300 K down to 10 K".Solid-State Electronics 224(2025):109045. |
Files in This Item: | There are no files associated with this item. |
Items in the repository are protected by copyright, with all rights reserved, unless otherwise indicated.
Edit Comment