Plasmon induced conductivity transition in monoclinic gallium oxide

doi:10.1016/j.surfin.2024.105592

Residential College	false
Status	已發表Published
	Plasmon induced conductivity transition in monoclinic gallium oxide
	Qiao, Baoshi 1; Zhang, Zhenzhong 1,2; Wang, Yunlong 2; Huang, Xiaoqian 1; Zhang, Zhihong 3; Zheng, Zhiyao 1; Sun, Xuan 1; Xie, Xiuhua 1; Li, Binghui 1; Chen, Xing 1; Liu, Kewei 1; Liu, Lei 1; Shen, Dezhen 1
	2025
Source Publication	Surfaces and Interfaces
ISSN	2468-0230
Volume	56
Abstract	Conductance transitions offer intriguing possibilities for developing advanced electronic devices. In this study, a reversible conductance transition in β-Ga₂O₃ thin film was realized through plasma treatment and subsequent annealing, where the β-Ga₂O₃ thin films were obtained by MOCVD and CVD methods. This transition is marked by a dramatic increase in carrier density by several orders of magnitude following plasma treating, which then recovers at slightly elevated temperatures. While there is a sharp change in conductivity, the lattice constant and optical bandgap remain nearly constant, with a slight increase in surface roughness and a significant increase in surface potential. A series of electrical tests rule out common donors such as carbon, hydrogen, gallium interstitials, and oxygen vacancies as causes of the increased conductivity observed in this work. Finally, this phenomenon is attributed to changes in the surface atom states. Leveraging this technology, an i-n homojunction photodetector based on β-Ga₂O₃ was fabricated, demonstrating a high on/off ratio and a significant photo/dark current ratio. As β-Ga₂O₃ gains recognition as a fourth-generation semiconductor material, these findings offer promising prospects for advancing the development of innovative electronic devices.
Keyword	Conductance transition Homojunction Plasma treatment β-Ga2O3
DOI	10.1016/j.surfin.2024.105592
URL	View the original
Language	英語English
Scopus ID	2-s2.0-85211096015
Fulltext Access	View Full-Text via DOI View Full-Text via Web of Science View Full-Text via Scopus
Citation statistics
Document Type	Journal article
Collection	University of Macau
Affiliation	1.State Key Laboratory of Luminescence and Applications, Changchun Institute of Optics, Fine Mechanics and Physics, Chinese Academy of Sciences, Changchun, No. 3888 Dongnanhu Road, 130033, China 2.School of Microelectronics, Dalian University of Technology, Dalian, Liaoning, 116024, China 3.Institute of Applied Physics and Materials Engineering, University of Macau, Taipa, Macao, 999078, China
Recommended Citation GB/T 7714	Qiao, Baoshi,Zhang, Zhenzhong,Wang, Yunlong,et al. Plasmon induced conductivity transition in monoclinic gallium oxide[J]. Surfaces and Interfaces, 2025, 56.
APA	Qiao, Baoshi., Zhang, Zhenzhong., Wang, Yunlong., Huang, Xiaoqian., Zhang, Zhihong., Zheng, Zhiyao., Sun, Xuan., Xie, Xiuhua., Li, Binghui., Chen, Xing., Liu, Kewei., Liu, Lei., & Shen, Dezhen (2025). Plasmon induced conductivity transition in monoclinic gallium oxide. Surfaces and Interfaces, 56.
MLA	Qiao, Baoshi,et al."Plasmon induced conductivity transition in monoclinic gallium oxide".Surfaces and Interfaces 56(2025).

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