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Patent NumberUS8931953B2
Status已授權 Granted
Low voltage low power CMOS temperature sensor circuit
Year Issued2015
2015-01-13
Application Number13/117,884
Application Date2011-05-27
Rights HolderThe Hong Kong University of Science and Technology
Man Kay Law; Amine Bermak; Howard Cam Luong
Date Available2015-01-13
CountryUnited States
Subtype发明专利 Invention
Abstract

The present invention provides an ultra-low power embedded CMOS temperature sensor based on serially connected subthreshold MOS operation particularly well suited for passive RFID food monitoring applications. Employing serially connected subthreshold MOS as sensing element enables reduced minimum supply voltage for further power reduction, which is very important in passive RFID applications. The temperature sensor may be part of a passive RFID tag and incorporates a temperature sensor core, proportional-to-absolute-temperature (PTAT) and complimentary-to-absolute-temperature (CTAT) delay generators, and a time-to-digital differential readout circuit. In one embodiment, the sensor is embedded inside a passive UHF RFID tag fabricated with a conventional 0.18 μm 1P6M CMOS process. With the sensor core working under 0.5 V and digital interfacing under 1 V, the sensor dissipates a measured total power of 119 nW at 33 samples/s and achieves an inaccuracy of +1/−0.8° C. from −10° C. to 30° C. after calibration.

Language英語English
Open (Notice) NumberUS20110291807A1
IPC Classification NumberG01k7/01 ; G06k19/07
CPC Classification NumberG06k19/0717 ; G01k7/01 ; G06k19/0723
URLView the original
Document TypePatent
CollectionINSTITUTE OF MICROELECTRONICS
AffiliationThe Hong Kong University of Science and Technology
Recommended Citation
GB/T 7714
Man Kay Law,Amine Bermak,Howard Cam Luong. Low voltage low power CMOS temperature sensor circuit. US8931953B2[P]. 2015-01-13.
APA Man Kay Law., Amine Bermak., & Howard Cam Luong (2011-05-27). Low voltage low power CMOS temperature sensor circuit.
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