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Patent NumberCN101741346B
Status已授權 Granted
用于实现零极点型高阶滤波器的跨导-电容双二阶单元
Year Issued2012
2012-06-20
Application Number200810226686.0
Application Date2008-11-19
Rights Holder中国科学院微电子研究所
陈勇; 周玉梅; 卫宝跃
Date Available2010-06-16
Country中国
Subtype发明专利 Invention
Abstract

本发明公开了一种用于实现零极点型高阶滤波器的跨导-电容双二阶单元,包括:一第一级跨导-电容积分单元,包括两个NMOS晶体管和一个电容,用于将接收的输入电压信号转换成电流信号,并给电容充电;一第二级跨导-电容积分单元,包括两个PMOS晶体管和一个电容,用于将第一级积分单元输出的电压信号转换成电流信号,并给电容充电;一内部堆叠管,包括两个PMOS晶体管,控制输出共模电压,并用于与第一级积分单元和第二级积分单元一起综合复数极点;一电流源,用于向跨导-电容双二阶单元的支路提供电流;一同相前馈电容元件,包括两个电容,用于确定跨导-电容双二阶单元的复数共轭零点特性。利用本发明,实现了零极点型高阶滤波器,降低了功耗。

Language中文Chinese
Open (Notice) NumberCN101741346A
IPC Classification NumberH03h11/04 ; H03h11/12
URLView the original
Document TypePatent
CollectionINSTITUTE OF MICROELECTRONICS
Affiliation中国科学院微电子研究所
Recommended Citation
GB/T 7714
陈勇,周玉梅,卫宝跃. 用于实现零极点型高阶滤波器的跨导-电容双二阶单元. CN101741346B[P]. 2012-06-20.
APA 陈勇., 周玉梅., & 卫宝跃 (2008-11-19). 用于实现零极点型高阶滤波器的跨导-电容双二阶单元.
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