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Patent NumberCN101447778B
Status已授權 Granted
一种采用零点Q值增强技术的双二阶单元
Year Issued2012
2012-02-08
Application Number200810227127.1
Application Date2008-11-21
Rights Holder中国科学院微电子研究所
陈勇; 周玉梅
Date Available2009-06-03
Country中国
Subtype发明专利 Invention
Abstract

本发明公开了一种采用零点Q值增强技术的双二阶单元,包括:一差分输入级,包括两个PMOS晶体管,接收差分输入信号;一内部源极跟随器,包括两个PMOS晶体管,接收差分输入级的输出信号;一电流源,提供双二阶单元支路电流;一级间差分电容,包括两个电容,确定双二阶单元的极点特性;一反相前馈电容元件,包括两个电容,抵消非理想因素,提高零点Q值;一同相前馈电容元件,包括两个电容,确定双二阶单元的复数共轭零点特性。本发明解决了零点Q值降低的问题,提出一种采用零点Q值增强技术的双二阶单元,可以采用级联设计方法实现零极点型高阶滤波器。

Language中文Chinese
Open (Notice) NumberCN101447778A
IPC Classification NumberH03h11/04 ; H03h11/12
URLView the original
Document TypePatent
CollectionINSTITUTE OF MICROELECTRONICS
Affiliation中国科学院微电子研究所
Recommended Citation
GB/T 7714
陈勇,周玉梅. 一种采用零点Q值增强技术的双二阶单元. CN101447778B[P]. 2012-02-08.
APA 陈勇., & 周玉梅 (2008-11-21). 一种采用零点Q值增强技术的双二阶单元.
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