A key step in realization of a ZnO homojunction light-emitting diode is the effective p-type doping in ZnO:N. In this article, a feasible route is demonstrated to enhance hole doping in ZnO:N films by the assistance of Beryllium. The newly synthesized p-type ZnO is applied in light-emitting devices. The corresponding p–i–n junction exhibits excellent diode characteristics, and strong near band edge ultraviolet emissions is also observed even at temperatures as high as 400 K under the injection of continuous current. The results represent a critical advance toward the development of high-efficiency and stabilized p-type ZnO, which is also a desirable key step for future ZnO-based optoelectronic applications.