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Optical investigations of Be doped ZnO films grown by molecular beam epitaxy
Mingming Chen1; Yuan Zhu2; Anqi Chen2; Zhen Shen2; Zikang Tang2,3
2016-02-10
Source PublicationMaterials Research Bulletin
ISSN0025-5408
Volume78Pages:16-19
Abstract

In this article, the optical properties of ZnO:Be films grown by plasma-assisted molecular beam epitaxy were investigated by the excitation density-dependent and temperature-dependent photoluminescence measurements. The low temperature photoluminescence spectra showed a dominant excitons bound to neutral donors (D°X) emission centered at 3.3540 eV and strong donor-acceptor pair (DAP) transitions at 3.3000 eV. In addition, it showed that the intensity ratio of the DAP and D°X peaks changed with background electron concentration. Furthermore, a shallow acceptor state with ionization energy of 116 meV was found and attributed to Zn vacancy. The present study further suggests that Be and N codoping ZnO might be suitable for fabricating reliable p-type ZnO materials.

KeywordOxides Thin Films Semiconductors Optical Properties Luminescence
DOI10.1016/j.materresbull.2016.02.012
URLView the original
Indexed BySCIE
Language英語English
WOS Research AreaMaterials Science
WOS SubjectMaterials Science, Multidisciplinary
WOS IDWOS:000374359700003
PublisherPERGAMON-ELSEVIER SCIENCE LTD, THE BOULEVARD, LANGFORD LANE, KIDLINGTON, OXFORD OX5 1GB, ENGLAND
Scopus ID2-s2.0-84958750435
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Document TypeJournal article
CollectionINSTITUTE OF APPLIED PHYSICS AND MATERIALS ENGINEERING
Corresponding AuthorMingming Chen; Yuan Zhu; Zikang Tang
Affiliation1.Faculty of Science, Jiangsu University, Zhenjiang, Jiangsu 212013, China
2.State Key Laboratory of Optoelectronic Materials and Technologies, School of Physics and Engineering, Sun Yat-sen University, Guangzhou 510275, China
3.The Institute of Applied Physics and Materials Engineering, University of Macau, Avenida da Universidade, Taipa, Macau, China
Corresponding Author AffilicationINSTITUTE OF APPLIED PHYSICS AND MATERIALS ENGINEERING
Recommended Citation
GB/T 7714
Mingming Chen,Yuan Zhu,Anqi Chen,et al. Optical investigations of Be doped ZnO films grown by molecular beam epitaxy[J]. Materials Research Bulletin, 2016, 78, 16-19.
APA Mingming Chen., Yuan Zhu., Anqi Chen., Zhen Shen., & Zikang Tang (2016). Optical investigations of Be doped ZnO films grown by molecular beam epitaxy. Materials Research Bulletin, 78, 16-19.
MLA Mingming Chen,et al."Optical investigations of Be doped ZnO films grown by molecular beam epitaxy".Materials Research Bulletin 78(2016):16-19.
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