Fabrication of nitrogen doped p-ZnO and ZnO light-emitting diodes on sapphire

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	Fabrication of nitrogen doped p-ZnO and ZnO light-emitting diodes on sapphire
	Wei Z.P.1; Lu Y.M.1; Shen D.Z.1; Zhang Z.Z.1; Yao B.1; Li B.H.1; Zhang J.Y.1; Zhao D.X.1; Fan X.W.1; Tang Z.K.4
	2008-11-01
Source Publication	Journal of the Korean Physical Society
Volume	53
Issue	5 PART 2
Pages	3038-3042
Abstract	Nitrogen-doped p-type ZnO thin films were grown on c-plane sapphire (AlO) substrates by plasma-assistant molecular beam epitaxy, where O and N were introduced via a RF plasma source simultaneously. In situ optical emission spectra of the plasma were employed to monitor the chemical species in the active gas sources, one of the most important growth parameters. By adjusting the growth parameters, we confirm the optimal condition for p-type doping growth. The reproducible p-type ZnO thin films have the hole concentration (N - N) up to 1.0 × 10 cm and the resistivity of 6 Ωcm. A ZnO LED was fabricated by depositing undoped n-type ZnO on the p-type layer. Electroluminescence spectra centered about 430 nm were obtained even at 350 K.
Keyword	Electroluminescence LED P-MBE P-type ZnO
URL	View the original
Language	英語English
Fulltext Access	View Full-Text via Scopus
Document Type	Conference paper
Collection	INSTITUTE OF APPLIED PHYSICS AND MATERIALS ENGINEERING
Affiliation	1.Changchun Institute of Optics Fine Mechanics and Physics Chinese Academy of Sciences 2.Chinese Academy of Sciences 3.Changchun University of Science and Technology 4.Hong Kong University of Science and Technology
Recommended Citation GB/T 7714	Wei Z.P.,Lu Y.M.,Shen D.Z.,et al. Fabrication of nitrogen doped p-ZnO and ZnO light-emitting diodes on sapphire[C], 2008, 3038-3042.
APA	Wei Z.P.., Lu Y.M.., Shen D.Z.., Zhang Z.Z.., Yao B.., Li B.H.., Zhang J.Y.., Zhao D.X.., Fan X.W.., & Tang Z.K. (2008). Fabrication of nitrogen doped p-ZnO and ZnO light-emitting diodes on sapphire. Journal of the Korean Physical Society, 53(5 PART 2), 3038-3042.

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