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Optical properties of CdSe/CdMnSe quantum wells grown by means of molecular beam epitaxy
Zhang X.-Q.1; Mei Z.-X.1; Duan N.1; Xu Z.1; Wang Y.-S.1; Xu X.-R.1; Tang Z.K.2
2001-06-01
Source PublicationWuli Xuebao/Acta Physica Sinica
ISSN10003290
Volume50Issue:6Pages:1170-1171
AbstractCdSe/Cd Zn Se quantum wells were grown by means of molecular beam epitaxy on substrate GaAs. The emission peak from excition-exciton scattering is observed in CdSe/CdMnSe quantum wells. When weaker excitation is used, radiative recombination decay time of the exciton is reduced as the excitation intensity is decreased. The results indicate that the dominant mechanism may be quenching of exciton emission by impurities and defects.
KeywordCdSe/CdMnSe Optical Properties Quantum Wells
URLView the original
Language英語English
Fulltext Access
Document TypeJournal article
CollectionUniversity of Macau
Affiliation1.Beijing Jiaotong University
2.Hong Kong University of Science and Technology
Recommended Citation
GB/T 7714
Zhang X.-Q.,Mei Z.-X.,Duan N.,et al. Optical properties of CdSe/CdMnSe quantum wells grown by means of molecular beam epitaxy[J]. Wuli Xuebao/Acta Physica Sinica, 2001, 50(6), 1170-1171.
APA Zhang X.-Q.., Mei Z.-X.., Duan N.., Xu Z.., Wang Y.-S.., Xu X.-R.., & Tang Z.K. (2001). Optical properties of CdSe/CdMnSe quantum wells grown by means of molecular beam epitaxy. Wuli Xuebao/Acta Physica Sinica, 50(6), 1170-1171.
MLA Zhang X.-Q.,et al."Optical properties of CdSe/CdMnSe quantum wells grown by means of molecular beam epitaxy".Wuli Xuebao/Acta Physica Sinica 50.6(2001):1170-1171.
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