Vanadium dioxide (VO ) nanowires/microbeams have attracted great interest recently because of their pronounced single-domain metal-insulator phase transition (MIT) behavior, which is promising for various device applications and deeper mechanism investigation. It is known that monoclinic VO nanostructures can be effectively prepared by a simple thermal evaporation method, while the growth of dense and ordered VO micro/nanowires with controlled cross sections is still a challenge. In the current study, we have selected different crystal facets as the growth template and achieved controllable growth of well-aligned VO micro/nanowire arrays. Combined with the crystal growth simulations, it is clarified that the epitaxial growth of VO micro/nanowires on TiO substrates is mainly dominated by both the initial crystallization mechanism and confinement of the crystal facets. The current studies not only show the potentials of fabricating VO micro/nanowire array-based devices but also demonstrate a facile strategy for nanowire arrays growth assisted by anisotropic crystal facets.