| Status | 已發表Published |
| Orderly array of in-plane gaas nanowires on exact (001) silicon for antiphase-domain-free GaAs thin films | |
| Li Q.; Ng K.W.; Lau K.M. | |
| 2015 | |
| Source Publication | CS MANTECH 2015 - 2015 International Conference on Compound Semiconductor Manufacturing Technology
 |
| Pages | 71-74 |
| Abstract | We report material characterization of antiphase-domain-free GaAs thin films grown out of highly ordered in-plane GaAs nanowires on exact (001) silicon substrates. The evolution of surface morphology from the nanowires to the thin films has been investigated by SEM. Anisotropic defect distribution and the impact of the initial nanowire quality on the resultant coalesced layers have been analyzed by TEM, XRD and AFM. The growth scheme in this work opens up a promising path to integrate GaAs based devices on the CMOS-compatible Si platform. |
| Keyword | Aspect ratio trapping III-V on silicon Planar nanowires Thin films |
| URL | View the original |
| Language | 英語English |
| Fulltext Access | |
| Document Type | Conference paper |
| Collection | University of Macau |
| Affiliation | Hong Kong University of Science and Technology |
| Recommended Citation GB/T 7714 | Li Q.,Ng K.W.,Lau K.M.. Orderly array of in-plane gaas nanowires on exact (001) silicon for antiphase-domain-free GaAs thin films[C], 2015, 71-74. |
| APA | Li Q.., Ng K.W.., & Lau K.M. (2015). Orderly array of in-plane gaas nanowires on exact (001) silicon for antiphase-domain-free GaAs thin films. CS MANTECH 2015 - 2015 International Conference on Compound Semiconductor Manufacturing Technology, 71-74. |
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