Residential College | false |
Status | 已發表Published |
High quality InGaP micropillars directly grown on silicon | |
Sun H.2; Ren F.2; Tran T.2; Ng K.W.2; Li K.2; Chang-Hasnain C.J.2 | |
2013-11-18 | |
Conference Name | IEEE-Photonics-Society Summer Topical Meeting |
Source Publication | 2013 IEEE Photonics Society Summer Topical Meeting Series, PSSTMS 2013 |
Pages | 50-51 |
Conference Date | JUL 08-10, 2013 |
Conference Place | Waikoloa, HI |
Abstract | High quality lattice-mismatched micron-sized InGaP pillars directly grown on silicon are studied using time-resolved photoluminescence. Micropillars with single-crystalline wurtzite phase exhibit bright photoluminescence and very long lifetimes, promising for optoelectronic devices and solar cell applications. © 2013 IEEE. |
DOI | 10.1109/PHOSST.2013.6614534 |
URL | View the original |
Language | 英語English |
WOS ID | WOS:000333963600025 |
Scopus ID | 2-s2.0-84887434276 |
Fulltext Access | |
Citation statistics | |
Document Type | Conference paper |
Collection | University of Macau |
Affiliation | 1.Tsinghua University 2.University of California, Berkeley |
Recommended Citation GB/T 7714 | Sun H.,Ren F.,Tran T.,et al. High quality InGaP micropillars directly grown on silicon[C], 2013, 50-51. |
APA | Sun H.., Ren F.., Tran T.., Ng K.W.., Li K.., & Chang-Hasnain C.J. (2013). High quality InGaP micropillars directly grown on silicon. 2013 IEEE Photonics Society Summer Topical Meeting Series, PSSTMS 2013, 50-51. |
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