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High quality InGaP micropillars directly grown on silicon
Sun H.2; Ren F.2; Tran T.2; Ng K.W.2; Li K.2; Chang-Hasnain C.J.2
2013-11-18
Conference NameIEEE-Photonics-Society Summer Topical Meeting
Source Publication2013 IEEE Photonics Society Summer Topical Meeting Series, PSSTMS 2013
Pages50-51
Conference DateJUL 08-10, 2013
Conference PlaceWaikoloa, HI
Abstract

High quality lattice-mismatched micron-sized InGaP pillars directly grown on silicon are studied using time-resolved photoluminescence. Micropillars with single-crystalline wurtzite phase exhibit bright photoluminescence and very long lifetimes, promising for optoelectronic devices and solar cell applications. © 2013 IEEE.

DOI10.1109/PHOSST.2013.6614534
URLView the original
Language英語English
WOS IDWOS:000333963600025
Scopus ID2-s2.0-84887434276
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Citation statistics
Document TypeConference paper
CollectionUniversity of Macau
Affiliation1.Tsinghua University
2.University of California, Berkeley
Recommended Citation
GB/T 7714
Sun H.,Ren F.,Tran T.,et al. High quality InGaP micropillars directly grown on silicon[C], 2013, 50-51.
APA Sun H.., Ren F.., Tran T.., Ng K.W.., Li K.., & Chang-Hasnain C.J. (2013). High quality InGaP micropillars directly grown on silicon. 2013 IEEE Photonics Society Summer Topical Meeting Series, PSSTMS 2013, 50-51.
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