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As-grown InGaAs nanolasers for integrated silicon photonics
Chen R.; Tran T.T.D.; Ng K.W.; Ko W.S.; Chuang L.C.; Sedgwick F.G.; Chang-Hasnain C.
2010-12-01
Source PublicationOptics InfoBase Conference Papers
AbstractWe report on-chip InGaAs nanopillar lasers directly grown on silicon using a low-temperature, CMOS-compatible MOCVD process. A novel whispering gallery and Fabry-Perot hybrid cavity mode provides optical feedback for laser oscillation in as-grown subwavelength nanopillars. © 2010 Optical Society of America.
URLView the original
Language英語English
Fulltext Access
Document TypeConference paper
CollectionUniversity of Macau
AffiliationUniversity of California, Berkeley
Recommended Citation
GB/T 7714
Chen R.,Tran T.T.D.,Ng K.W.,et al. As-grown InGaAs nanolasers for integrated silicon photonics[C], 2010.
APA Chen R.., Tran T.T.D.., Ng K.W.., Ko W.S.., Chuang L.C.., Sedgwick F.G.., & Chang-Hasnain C. (2010). As-grown InGaAs nanolasers for integrated silicon photonics. Optics InfoBase Conference Papers.
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