Residential College | false |
Status | 已發表Published |
A route to single-crystalline ZnO films with low residual electron concentration | |
Liu J.S.2; Shan C.X.2; Wang S.P.2; Sun F.2; Yao B.2; Shen D.Z.2 | |
2010-10-01 | |
Source Publication | JOURNAL OF CRYSTAL GROWTH |
ISSN | 0022-0248 |
Volume | 312Issue:20Pages:2861-2864 |
Abstract | Single-crystalline ZnO films have been grown on a-plane sapphire in plasma assisted molecular beam epitaxy by introducing a high-temperature ZnO buffer layer. The residual electron concentration of the films can be lowered to 1.5×10 cm, comparable with the best value ever reported for ZnO films grown on a rare and costly substrate of ScAlMgO . A 3×3 reconstruction has been observed on the films grown in this route, which reveals that the films have very smooth surface. X-ray phi-scan spectrum of the films shows six peaks with 60° intervals, and two-dimensional X-ray diffraction datum indicates the single-crystalline nature of the films. Low temperature photoluminescence spectrum of the films shows a dominant free exciton emission and five phonon replicas, confirming the high quality of the films. |
Keyword | A1. X-ray Diffraction A3. Molecular Beam Epitaxy B1. Zinc Compounds B2. Semiconducting Ii-vi Materials |
DOI | 10.1016/j.jcrysgro.2010.07.006 |
URL | View the original |
Indexed By | SCIE |
Language | 英語English |
WOS Research Area | Crystallography ; Materials Science ; Physics |
WOS Subject | Crystallography ; Materials Science, Multidisciplinary ; Physics, Applied |
WOS ID | WOS:000282859400004 |
Scopus ID | 2-s2.0-77956413299 |
Fulltext Access | |
Citation statistics | |
Document Type | Journal article |
Collection | INSTITUTE OF APPLIED PHYSICS AND MATERIALS ENGINEERING |
Corresponding Author | Shan C.X. |
Affiliation | 1.University of Chinese Academy of Sciences 2.Changchun Institute of Optics Fine Mechanics and Physics Chinese Academy of Sciences |
Recommended Citation GB/T 7714 | Liu J.S.,Shan C.X.,Wang S.P.,et al. A route to single-crystalline ZnO films with low residual electron concentration[J]. JOURNAL OF CRYSTAL GROWTH, 2010, 312(20), 2861-2864. |
APA | Liu J.S.., Shan C.X.., Wang S.P.., Sun F.., Yao B.., & Shen D.Z. (2010). A route to single-crystalline ZnO films with low residual electron concentration. JOURNAL OF CRYSTAL GROWTH, 312(20), 2861-2864. |
MLA | Liu J.S.,et al."A route to single-crystalline ZnO films with low residual electron concentration".JOURNAL OF CRYSTAL GROWTH 312.20(2010):2861-2864. |
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