Phase transformation behavior of (Pb,La)(Zr,Sn,Ti)O3 and Pb (Nb,Zr,Sn,Ti)O3 antiferroelectric thin films deposited on LaNiO 3-buffered silicon substrates by sol-gel processing

doi:10.1007/s10971-007-0767-z

Residential College	false
Status	已發表Published
	Phase transformation behavior of (Pb,La)(Zr,Sn,Ti)O3 and Pb (Nb,Zr,Sn,Ti)O3 antiferroelectric thin films deposited on LaNiO 3-buffered silicon substrates by sol-gel processing
	Zhai J.1; Shen B.1; Yao X.1; Xu Z.2; Li X.2; Chen H.2
	2007-06-01
Source Publication	Journal of Sol-Gel Science and Technology
ISSN	09280707
Volume	42 Issue:3 Pages:369-373
Abstract	Antiferroelectric (Pb,La)(Zr,Sn,Ti)O (PLZST) and Pb(Nb,Zr,Sn,Ti)O (PNZST) thin films have been fabricated on LaNiO/Pt/Ti/SiO/Si substrates by a sol-gel processing. These films showed highly preferred (100) orientation due to the grain-on-grain local epitaxial growth. The PLZST films close to the AFE-FE phase boundary showed the electric-field-induced ferroelectric (FE) state, which could return back to its original AFE state only when the thermal activation was high enough. The AFE to FE phase transformation in PNZST films can be adjusted by the dc bias field in temperature. Phase transformation behavior of PNZST and PLZST antiferroelectric thin films were investigated as a function of temperature and dc bias field. © Springer Science + Business Media, LLC 2007.
Keyword	Antiferroelectric Electrical Property Phase Transformation Sol-gel Process Thin Film
DOI	10.1007/s10971-007-0767-z
URL	View the original
Language	英語English
WOS ID	WOS:000245899500026
Scopus ID	2-s2.0-34247403399
Fulltext Access	View Full-Text via DOI View Full-Text via Web of Science View Full-Text via Scopus
Citation statistics
Document Type	Journal article
Collection	University of Macau
Affiliation	1.Tongji University 2.City University of Hong Kong
Recommended Citation GB/T 7714	Zhai J.,Shen B.,Yao X.,et al. Phase transformation behavior of (Pb,La)(Zr,Sn,Ti)O3 and Pb (Nb,Zr,Sn,Ti)O3 antiferroelectric thin films deposited on LaNiO 3-buffered silicon substrates by sol-gel processing[J]. Journal of Sol-Gel Science and Technology, 2007, 42(3), 369-373.
APA	Zhai J.., Shen B.., Yao X.., Xu Z.., Li X.., & Chen H. (2007). Phase transformation behavior of (Pb,La)(Zr,Sn,Ti)O3 and Pb (Nb,Zr,Sn,Ti)O3 antiferroelectric thin films deposited on LaNiO 3-buffered silicon substrates by sol-gel processing. Journal of Sol-Gel Science and Technology, 42(3), 369-373.
MLA	Zhai J.,et al."Phase transformation behavior of (Pb,La)(Zr,Sn,Ti)O3 and Pb (Nb,Zr,Sn,Ti)O3 antiferroelectric thin films deposited on LaNiO 3-buffered silicon substrates by sol-gel processing".Journal of Sol-Gel Science and Technology 42.3(2007):369-373.

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