Effect of the orientation on the ferroelectric-antiferroelectric behavior of sol-gel deposited (Pb,Nb)(Zr,Sn,Ti)O3 thin films

doi:10.1016/j.tsf.2003.09.067

Residential College	false
Status	已發表Published
	Effect of the orientation on the ferroelectric-antiferroelectric behavior of sol-gel deposited (Pb,Nb)(Zr,Sn,Ti)O3 thin films
	Zhai J.; Li X.; Chen H.
	2004-01-15
Source Publication	Thin Solid Films
ISSN	00406090
Volume	446 Issue:2 Pages:200-204
Abstract	The (Pb,Nb)(Zr,Sn,Ti)O (PNZST) antiferroelectric thin films were prepared on two different substrates by sol-gel methods. Films derived on the LNO/Pt/Ti/SiO/Si substrates showed a strong (100) preferred orientation. The dependence of electrical properties derived on the Pt/Ti/SiO/Si and LNO/Pt/Ti/SiO/Si substrates have been studied, with the emphasis placed on field-induced phase switching from the antiferroectric to the ferroelectric state. The PNZST thin films deposition on two kinds of substrates show different phase transition behavior and associated properties such as antiferroelectric (AFE) to ferrroelectric (FE) switching field E, FE to AFE switching field E and the hysteresis ΔE=E-E. © 2003 Elsevier B.V. All rights reserved.
Keyword	Antiferroelectric Thin Film Electric Properties (Section a) Phase Transitions Structural Properties
DOI	10.1016/j.tsf.2003.09.067
URL	View the original
Language	英語English
WOS ID	WOS:000188057000007
Scopus ID	2-s2.0-0347380850
Fulltext Access	View Full-Text via DOI View Full-Text via Web of Science View Full-Text via Scopus
Citation statistics
Document Type	Journal article
Collection	University of Macau
Affiliation	City University of Hong Kong
Recommended Citation GB/T 7714	Zhai J.,Li X.,Chen H.. Effect of the orientation on the ferroelectric-antiferroelectric behavior of sol-gel deposited (Pb,Nb)(Zr,Sn,Ti)O3 thin films[J]. Thin Solid Films, 2004, 446(2), 200-204.
APA	Zhai J.., Li X.., & Chen H. (2004). Effect of the orientation on the ferroelectric-antiferroelectric behavior of sol-gel deposited (Pb,Nb)(Zr,Sn,Ti)O3 thin films. Thin Solid Films, 446(2), 200-204.
MLA	Zhai J.,et al."Effect of the orientation on the ferroelectric-antiferroelectric behavior of sol-gel deposited (Pb,Nb)(Zr,Sn,Ti)O3 thin films".Thin Solid Films 446.2(2004):200-204.

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