| Status | 已發表Published |
| Microstructure and dielectric properties of PZN-PT-BT relaxor ferroelectric ceramics | |
| Wang X.; Xu Z.; Chen H. | |
| 2002-12-02 | |
| Source Publication | Key Engineering Materials
 |
| Volume | 228-229 |
| Pages | 15-20 |
| Abstract | Paraelectric Ba(ZnNb)O (BZN) is realized as an implicit component in Pb(ZnNb)O- PbTiO-BaTiO (PZN-PT-BT), which decreases phase transition temperature and weakens dielectric properties. The dielectric behaviors under high electrical field have been investigated. In the broad temperature range of the diffuse phase transition, PZN-PT-BT ceramics show highly induced polarization. An unusual linear relation of the polarization with electrical field has been observed near the central portion of the hysteresis loops of some samples, which are both temperature and composition dependent. The observed ferroelectric properties may be understood using a model of PZN-based matrix containing ferroelectric PT and paraelectric BZN nano-phase regions. |
| Keyword | Dielectrics Ferroelectric Nano-Domains Paraelectric PZN-PT-BT Relaxor |
| URL | View the original |
| Language | 英語English |
| Fulltext Access | |
| Document Type | Conference paper |
| Collection | University of Macau |
| Affiliation | Xi'an Jiaotong University |
| Recommended Citation GB/T 7714 | Wang X.,Xu Z.,Chen H.. Microstructure and dielectric properties of PZN-PT-BT relaxor ferroelectric ceramics[C], 2002, 15-20. |
| APA | Wang X.., Xu Z.., & Chen H. (2002). Microstructure and dielectric properties of PZN-PT-BT relaxor ferroelectric ceramics. Key Engineering Materials, 228-229, 15-20. |
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