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Dielectric properties under dc-bias field of Ba0.6Sr0.4TiO3 with various grain sizes
Jiwei Z.1; Xi Y.1; Xiaogang C.1; Liangying Z.1; Chen H.2
2002-06-01
Source PublicationMaterials Science and Engineering B: Solid-State Materials for Advanced Technology
ISSN09215107
Volume94Issue:2-3Pages:164-169
Abstract

We study the effect of grain size on the dc field dependence of dielectric characteristics in BaSrTiO ceramics prepared by a sol-gel method. The samples were observed and analysed by SEM and X-ray diffraction. The dielectric constant samples decreases as the applied dc field increases. The influence of the dc field on the loss factor is much less than that on the dielectric constant. With increasing of the applied voltage, the T was increased and the peaks were suppressed and broadened. As the grain size increases, The maximum dielectric constant and the percentage change of dielectric constant under a dc field increase. A transition broadening and shift of T are observed as grain size decreases. © 2002 Elsevier Science B.V. All rights reserved.

KeywordCeramics Electric Field Grain Size Tunability
DOI10.1016/S0921-5107(02)00061-2
URLView the original
Language英語English
WOS IDWOS:000176326200008
Scopus ID2-s2.0-0036606054
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Citation statistics
Document TypeJournal article
CollectionUniversity of Macau
Affiliation1.Tongji University
2.City University of Hong Kong
Recommended Citation
GB/T 7714
Jiwei Z.,Xi Y.,Xiaogang C.,et al. Dielectric properties under dc-bias field of Ba0.6Sr0.4TiO3 with various grain sizes[J]. Materials Science and Engineering B: Solid-State Materials for Advanced Technology, 2002, 94(2-3), 164-169.
APA Jiwei Z.., Xi Y.., Xiaogang C.., Liangying Z.., & Chen H. (2002). Dielectric properties under dc-bias field of Ba0.6Sr0.4TiO3 with various grain sizes. Materials Science and Engineering B: Solid-State Materials for Advanced Technology, 94(2-3), 164-169.
MLA Jiwei Z.,et al."Dielectric properties under dc-bias field of Ba0.6Sr0.4TiO3 with various grain sizes".Materials Science and Engineering B: Solid-State Materials for Advanced Technology 94.2-3(2002):164-169.
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