| Residential College | false |
| Status | 已發表Published |
| Effect of composition and growth temperature on the dielectric properties of Pb(ScTa)1-xTixO3 (PSTT) thin films grown by MOCVD | |
| Lin C.H.2; Friddle P.A.2; Ma C.H.2; Chen H.2 | |
| 2001-12-01 | |
| Conference Name | 3rd Asian Meeting on Ferroelectricity (AMF-3) |
| Source Publication | Ferroelectrics
 |
| Volume | 259 |
| Issue | 1 |
| Pages | 229-238 |
| Conference Date | DEC 12-15, 2000 |
| Conference Place | HONG KONG, PEOPLES R CHINA |
| Abstract | Highly (002) textured Pb(ScTa)TiO (PSTT) (with x = 0-0.3) thin films were grown on LaNiO buffered Si substrates using metal-organic chemical vapor deposition (MOCVD) technique at temperatures ranging from 600 to 685°C. Dielectric properties showed strong dependency on the growth temperature and PT content. Ti addition acted as a "Curie" temperature shifter and increased the dielectric constants. Dielectric dispersion behavior was observed, along with a diffuse phase transition, characterizing the relaxor properties of PSTT. © 2001 Taylor & Francis. |
| Keyword | Composition Dielectric Dispersion Growth Temperature Relaxor |
| DOI | 10.1080/00150190108008743 |
| URL | View the original |
| Language | 英語English |
| WOS ID | WOS:000177215200037 |
| Scopus ID | 2-s2.0-78649400661 |
| Fulltext Access | |
| Citation statistics | |
| Document Type | Conference paper |
| Collection | University of Macau |
| Affiliation | 1.City University of Hong Kong 2.University of Illinois at Urbana-Champaign |
| Recommended Citation GB/T 7714 | Lin C.H.,Friddle P.A.,Ma C.H.,et al. Effect of composition and growth temperature on the dielectric properties of Pb(ScTa)1-xTixO3 (PSTT) thin films grown by MOCVD[C], 2001, 229-238. |
| APA | Lin C.H.., Friddle P.A.., Ma C.H.., & Chen H. (2001). Effect of composition and growth temperature on the dielectric properties of Pb(ScTa)1-xTixO3 (PSTT) thin films grown by MOCVD. Ferroelectrics, 259(1), 229-238. |
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