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Crystal structures of BaMgF4-xOxn thin films
Wang X.2; Fujihara S.1; Kimura T.1; Chen H.3
2001-12-01
Conference Name3rd Asian Meeting on Ferroelectrics, AMF-3
Source PublicationFerroelectrics
Volume264
Issue1
Pages121-126
Conference Date12 December 2000through 15 December 2000
Conference PlaceHong Kong, China
Abstract

A chemical deposition method has been employed to synthesize BaMgF thin films. Crystal structures of the grown thin films were found to be sensitive to thermal treatment conditions. Only the thin films heated at 550°C for 1 to 2 hours exhibited BaMgF-type structure. Surface composition analysis indicated that anions in the thin films contained not only fluorine ions, but oxygen ions as well. The virtual composition of the thin films is thus BaMgFO instead of BaMgF. The phase transformation and the crystal structures of BaMgFO thin films at different synthesized temperatures were investigated. A new cubic structure of BaMgFO was identified. © 2001 Taylor & Francis.

KeywordCrystal Structure Phase Transformation Thin Film
DOI10.1080/00150190108235348
URLView the original
Language英語English
Scopus ID2-s2.0-71149107935
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Document TypeConference paper
CollectionUniversity of Macau
Affiliation1.Keio University
2.Xi'an Jiaotong University
3.City University of Hong Kong
Recommended Citation
GB/T 7714
Wang X.,Fujihara S.,Kimura T.,et al. Crystal structures of BaMgF4-xOxn thin films[C], 2001, 121-126.
APA Wang X.., Fujihara S.., Kimura T.., & Chen H. (2001). Crystal structures of BaMgF4-xOxn thin films. Ferroelectrics, 264(1), 121-126.
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