Electrical characteristics of 25 nm Pr(ZrTi)O3 thin films grown on Si by metalorganic chemical vapor deposition

doi:10.1063/1.1305824

Residential College	false
Status	已發表Published
	Electrical characteristics of 25 nm Pr(ZrTi)O3 thin films grown on Si by metalorganic chemical vapor deposition
	Lin C.H.1; Friddle P.A.1; Lu X.1; Chen H.1; Kim Y.1; Wu T.B.2
	2000-08-15
Source Publication	Journal of Applied Physics
ISSN	00218979
Volume	88 Issue:4 Pages:2157-2159
Abstract	Pb(ZrTi)O thin films 25 nm in thickness were grown on LaNiO/Pt/Ti buffered Si substrates at 600°C by metalorganic chemical vapor deposition. P-E studies showed a remanent polarization value of 8 μC/cm with a coercive field of 200 kV/cm. In polarization fatigue studies, these films only showed slight degradation in remanent polarization up to 4×10 cycles (±3 V oscillation) before breakdown. Moreover, the effect of space charge on the C-V behavior of these films was illustrated I-V characteristics of these films were also described. © 2000 American Institute of Physics.
DOI	10.1063/1.1305824
URL	View the original
Language	英語English
WOS ID	WOS:000088783800074
Scopus ID	2-s2.0-3042512975
Fulltext Access	View Full-Text via DOI View Full-Text via Web of Science View Full-Text via Scopus
Citation statistics
Document Type	Journal article
Collection	University of Macau
Affiliation	1.University of Illinois at Urbana-Champaign 2.National Tsing Hua University
Recommended Citation GB/T 7714	Lin C.H.,Friddle P.A.,Lu X.,et al. Electrical characteristics of 25 nm Pr(ZrTi)O3 thin films grown on Si by metalorganic chemical vapor deposition[J]. Journal of Applied Physics, 2000, 88(4), 2157-2159.
APA	Lin C.H.., Friddle P.A.., Lu X.., Chen H.., Kim Y.., & Wu T.B. (2000). Electrical characteristics of 25 nm Pr(ZrTi)O3 thin films grown on Si by metalorganic chemical vapor deposition. Journal of Applied Physics, 88(4), 2157-2159.
MLA	Lin C.H.,et al."Electrical characteristics of 25 nm Pr(ZrTi)O3 thin films grown on Si by metalorganic chemical vapor deposition".Journal of Applied Physics 88.4(2000):2157-2159.

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