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Determination of phonon dispersions from x-ray transmission scattering: The example of silicon
Holt M.1; Wu Z.1; Hong H.1; Zschack P.1; Jemian P.1; Tischler J.1; Chen H.1; Chiang T.-C.1
1999-10-18
Source PublicationPhysical Review Letters
ISSN10797114 00319007
Volume83Issue:16Pages:3317-3319
Abstract

A beam of monochromatic synchrotron x-ray incident on a silicon wafer creates a rich intensity pattern behind the wafer that reflects the cross section of scattering by thermally populated phonons. A least-squares fit of the patterns based on a lattice dynamics calculation yields the phonon dispersion relations over the entire reciprocal space. This simple and efficient method is suitable for phonon studies in essentially all materials and complements the traditional neutron scattering technique. 1999 © The American Physical Society.

DOI10.1103/PhysRevLett.83.3317
URLView the original
Language英語English
WOS IDWOS:000083133200054
Scopus ID2-s2.0-0000879418
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Document TypeJournal article
CollectionUniversity of Macau
Affiliation1.University of Illinois at Urbana-Champaign
2.Oak Ridge National Laboratory
Recommended Citation
GB/T 7714
Holt M.,Wu Z.,Hong H.,et al. Determination of phonon dispersions from x-ray transmission scattering: The example of silicon[J]. Physical Review Letters, 1999, 83(16), 3317-3319.
APA Holt M.., Wu Z.., Hong H.., Zschack P.., Jemian P.., Tischler J.., Chen H.., & Chiang T.-C. (1999). Determination of phonon dispersions from x-ray transmission scattering: The example of silicon. Physical Review Letters, 83(16), 3317-3319.
MLA Holt M.,et al."Determination of phonon dispersions from x-ray transmission scattering: The example of silicon".Physical Review Letters 83.16(1999):3317-3319.
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