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Pattern of x-ray scattering by thermal phonons in si
Wu Z.1; Hong H.1; Aburano R.1; Zschack P.1; Jemian P.1; Tischler J.3; Chen H.1; Luh D.-A.1; Chiang T.-C.1
1999
Source PublicationPhysical Review B - Condensed Matter and Materials Physics
ISSN1550235X 10980121
Volume59Issue:5Pages:3283-3286
Abstract

Intensity distribution of x-ray scattering by thermal phonons in Si was recorded using synchrotron undulator radiation. A high-energy beam sent through a Si(111) wafer in a transmission Laue geometry yielded a threefold symmetric pattern for the scattering cross section with rich details governed by phonon dispersion, population, and polarization. © 1999 The American Physical Society.

DOI10.1103/PhysRevB.59.3283
URLView the original
Language英語English
WOS IDWOS:000078699300006
Scopus ID2-s2.0-0001764243
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Citation statistics
Document TypeJournal article
CollectionUniversity of Macau
Affiliation1.University of Illinois at Urbana-Champaign
2.Cypress Semiconductor
3.Oak Ridge National Laboratory
Recommended Citation
GB/T 7714
Wu Z.,Hong H.,Aburano R.,et al. Pattern of x-ray scattering by thermal phonons in si[J]. Physical Review B - Condensed Matter and Materials Physics, 1999, 59(5), 3283-3286.
APA Wu Z.., Hong H.., Aburano R.., Zschack P.., Jemian P.., Tischler J.., Chen H.., Luh D.-A.., & Chiang T.-C. (1999). Pattern of x-ray scattering by thermal phonons in si. Physical Review B - Condensed Matter and Materials Physics, 59(5), 3283-3286.
MLA Wu Z.,et al."Pattern of x-ray scattering by thermal phonons in si".Physical Review B - Condensed Matter and Materials Physics 59.5(1999):3283-3286.
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