Residential College | false |
Status | 已發表Published |
X-ray truncation rods analysis of Cu thin films on C-plane sapphire | |
Chung K.S.; Hong Hawoong; Aburano R.D.; Roesler J.M.; Chiang T.C.; Chen Haydn | |
1996-12-01 | |
Source Publication | Materials Research Society Symposium Proceedings |
Volume | 437Pages:21-26 |
Abstract | The interfacial structure of room-temperature MBE-grown Cu thin film on c-plane sapphire has been studied by measuring the substrate crystal truncation rod (CTR) using synchrotron-radiation. One substrate was annealed in air at 1500 °C for 3 hours followed by an anneal in UHV at 1200 °C for 30 minutes prior to Cu deposition. CTR from a clean sapphire substrate without Cu coverage was measured as a reference. The annealed substrate showed higher diffracted intensity along the CTR due to changes in surface structure. The terminating sequence of the substrate surface layers have been obtained from intensity profile analysis. |
URL | View the original |
Language | 英語English |
Fulltext Access | |
Document Type | Journal article |
Collection | University of Macau |
Affiliation | University of Illinois at Urbana-Champaign |
Recommended Citation GB/T 7714 | Chung K.S.,Hong Hawoong,Aburano R.D.,et al. X-ray truncation rods analysis of Cu thin films on C-plane sapphire[J]. Materials Research Society Symposium Proceedings, 1996, 437, 21-26. |
APA | Chung K.S.., Hong Hawoong., Aburano R.D.., Roesler J.M.., Chiang T.C.., & Chen Haydn (1996). X-ray truncation rods analysis of Cu thin films on C-plane sapphire. Materials Research Society Symposium Proceedings, 437, 21-26. |
MLA | Chung K.S.,et al."X-ray truncation rods analysis of Cu thin films on C-plane sapphire".Materials Research Society Symposium Proceedings 437(1996):21-26. |
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